Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Tetramethylammonium Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetramethylammonium Ion SCHEMBL29267868 | 1.00 | CHRNB2 (0.67) | — | |
| Tetramethylammonium Ion SCHEMBL2139534 | 0.93 | — | — | |
| Tetramethylammonium Ion SCHEMBL28206258 | 0.93 | CHRNB2 (0.57) | — | |
| Tetramethylammonium Ion SCHEMBL27445622 | 0.93 | — | — | |
| Tetramethylammonium Ion SCHEMBL29267869 | 0.93 | CHRNB2 (0.57) | — | |
| Tetramethylammonium Ion SCHEMBL15205926 | 0.91 | CHRNB2 (0.80) | — | |
| Tetramethylammonium Ion SCHEMBL7028672 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL845827 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL22436611 | 0.91 | CHRNB2 (0.80) | — | |
| Tetramethylammonium Ion SCHEMBL5684461 | 0.91 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-109153690-A | Silsesquioxane resins and silicyl acid anhydride composition | 美国陶氏有机硅公司 | 2019-01-04 | — | — | CN | claimed |
| CN-109071576-A | Silsesquioxane resin and an oxaamine composition | 美国陶氏有机硅公司 | 2018-12-21 | — | — | CN | claimed |
| CN-106715399-A | Diazirine compounds as photocrosslinkers and photoimageable compositions comprising them | 普罗米鲁斯有限责任公司 | 2017-05-24 | — | — | CN | claimed |
| CN-115248535-A | Method for defining multiple photoresist patterns | 南亚科技股份有限公司 | 2022-10-28 | — | — | CN | disclosed |
| CN-114975437-A | Nanostructured field effect transistors and methods of forming the same | 台湾积体电路制造股份有限公司 | 2022-08-30 | — | — | CN | disclosed |
| CN-109153690-A | Silsesquioxane resins and silicyl acid anhydride composition | 美国陶氏有机硅公司 | 2019-01-04 | — | — | CN | disclosed |
| CN-109071576-A | Silsesquioxane resin and an oxaamine composition | 美国陶氏有机硅公司 | 2018-12-21 | — | — | CN | disclosed |
| CN-108227374-A | Use the method for siliceous bed course | 罗门哈斯电子材料有限责任公司 | 2018-06-29 | — | — | CN | disclosed |
| CN-108227383-A | Use the method for siliceous bed course | 罗门哈斯电子材料有限责任公司 | 2018-06-29 | — | — | CN | disclosed |
| CN-103682038-B | Light-emitting device and its manufacture method | 日亚化学工业株式会社 | 2017-11-24 | — | — | CN | disclosed |
| CN-106631923-A | Thermal acid generators and photoresist pattern trimming compositions and methods | 罗门哈斯电子材料有限责任公司 | 2017-05-10 | — | — | CN | disclosed |
| US-20100009540-A1 | POLISHING COMPOUND, ITS PRODUCTION PROCESS AND POLISHING METHOD | ASAHI GLASS COMPANY LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2132259-A1 | METHOD FOR REMOVING COLOR FROM POLYMERIC MATERIAL | BASF SE (DE) | 2009-12-16 | — | — | EP | disclosed |
| CN-100552546-C | Be used for the substrate adhesion promoter of photosensitive resin composition and the photosensitive resin composition that comprises this promoter | AZ ELECTRONIC MATERIALS K K (JP) | 2009-10-21 | — | — | CN | disclosed |
| CN-101303970-A | Method for carrying out photoetching process and method for manufacturing semiconductor | TAIWAN SEMICONDUCTOR MFG (CN) | 2008-11-12 | — | — | CN | disclosed |
| WO-2008125465-A1 | METHOD FOR REMOVING COLOR FROM POLYMERIC MATERIAL | BASF SE (CH) | 2008-10-23 | — | — | WO | disclosed |
| US-20080255259-A1 | Method for removing color from polymeric material | BASF SE (DE) | 2008-10-16 | — | — | US | disclosed |
| CN-1771466-A | Substrate adhesion improver for photosensitive resin composition and photosensitive resin composition containing the same | AZ ELECTRONIC MATERIALS K K (JP) | 2006-05-10 | — | — | CN | disclosed |
| US-20050194565-A1 | Polishing compound, its production process and polishing method | ASAHI GLASS COMPANY LIMITED (JP) | 2005-09-08 | — | — | US | disclosed |
| EP-1544901-A1 | POLISHING COMPOUND COMPOSITION, METHOD FOR PRODUCING SAME AND POLISHING METHOD | Seimi Chemical Co., Ltd. (JP) | 2005-06-22 | — | — | EP | disclosed |