Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 3/20 | 0.36 |
| ▸ | TSHR | P16473 | 2/20 | 0.34 |
| ▸ | ABCC9 | O60706 | 2/20 | 0.34 |
| ▸ | ABCC8 | Q09428 | 2/20 | 0.34 |
| ▸ | KCNJ11 | Q14654 | 2/20 | 0.34 |
| ▸ | KCNJ8 | Q15842 | 2/20 | 0.34 |
| ▸ | MEN1 | O00255 | 1/20 | 0.34 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.34 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.34 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.34 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.34 |
| ▸ | MGLL | Q99685 | 2/20 | 0.34 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.34 |
| ▸ | POLB | P06746 | 2/20 | 0.33 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.33 |
| ▸ | GAA | P10253 | 1/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | HTT | P42858 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6117538 | 0.94 | HSD11B1 (0.35) | HSD11B1TSHRABCC9ABCC8KCNJ11 | |
| SCHEMBL962244 | 0.93 | HSD11B1 (0.40) | HSD11B1TSHRABCC9ABCC8KCNJ11 | |
| SCHEMBL482785 | 0.87 | MGLL (0.37) | HSD11B1TSHRABCC9ABCC8KCNJ11 | |
| SCHEMBL246107 | 0.83 | TSHR (0.40) | HSD11B1TSHRMEN1KMT2AMGLL | |
| SCHEMBL1319528 | 0.81 | MGLL (0.32) | HSD11B1MGLLALDH1A1POLBMAPK1 | |
| SCHEMBL2580598 | 0.81 | THRB (0.33) | HSD11B1MGLLGAAL3MBTL1 | |
| SCHEMBL962176 | 0.80 | MAPT (0.42) | HSD11B1TSHRMEN1KMT2AALDH1A1 | |
| SCHEMBL2771477 | 0.80 | ATM (0.36) | HSD11B1TSHRMEN1KMT2AMGLL | |
| SCHEMBL1671640 | 0.79 | PDCD1 (0.45) | TSHRCYP1A2CYP2D6CYP2C19KMT2A | |
| SCHEMBL1673160 | 0.79 | KMT2A (0.35) | HSD11B1TSHRABCC9ABCC8KCNJ11 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2244124-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-26 | — | — | EP | disclosed |
| EP-2244126-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2000851-B1 | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-8968979-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| EP-2267533-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-22 | — | — | EP | disclosed |
| EP-2244125-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-08 | — | — | EP | disclosed |
| EP-2146245-B1 | Resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-06-25 | — | — | EP | disclosed |
| US-8592133-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-11-26 | — | — | US | disclosed |
| US-8586282-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-11-19 | — | — | US | disclosed |
| EP-2100887-B1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-07-03 | — | — | EP | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008962-A1 | Polymerizable ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
| US-20080008960-A1 | Mixture of an adamantane acrylic ester resin which becomes soluble in alkaline developer under action of an acid and sulfonium salt acid generator; microlithography with advantages of resolution, pattern density dependence and mask fidelity; use in precise microfabrication | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008965-A1 | Ester compounds and their preparation, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | MDM4, MUS81, NOP2 | HSD11B1 4388/4885TSHR 4239/4885ABCC9 2588/4885 |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | HSD11B1 3526/4885TSHR 1215/4885ABCC9 1577/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | HSD11B1 2970/4885TSHR 2374/4885ABCC9 2051/4885 |
| US-20080008965-A1 | Ester compounds and their preparation, polymers, resist compositions and patterning process | ESR1, H1-2, H1-4 | HSD11B1 1579/4885TSHR 2534/4885ABCC9 2846/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | HSD11B1 1954/4885TSHR 1699/4885ABCC9 530/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.