SCHEMBL98155

SCHEMBL98155

Cc1cc([S+](c2ccccc2)c2ccccc2)cc(C)c1OC(=O)CC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.44

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
P2RX7 Q99572 8/20 0.44
MEN1 O00255 3/20 0.43
KMT2A Q03164 3/20 0.43
ALDH1A1 P00352 2/20 0.40
HTT P42858 1/20 0.40
LMNA P02545 1/20 0.40
MAPT P10636 1/20 0.39
MAPK1 P28482 1/20 0.39
NPSR1 Q6W5P4 1/20 0.39
HSD11B1 P28845 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10186521 0.87 P2RX7 (0.37) P2RX7MEN1KMT2AALDH1A1HTT
SCHEMBL98153 0.82 KDM4E (0.49) P2RX7MEN1KMT2AALDH1A1HTT
SCHEMBL25657997 0.81 P2RX7 (0.47) P2RX7MEN1KMT2AALDH1A1HTT
SCHEMBL9944392 0.77 CYP19A1 (0.39) P2RX7MEN1KMT2AALDH1A1HTT
SCHEMBL98573 0.77 SMN1; SMN2 (0.45) MEN1KMT2AALDH1A1HTTLMNA
SCHEMBL31564942 0.76 KDM4E (0.44) P2RX7MEN1KMT2AALDH1A1HTT
SCHEMBL28363484 0.75 P2RX7 (0.58) P2RX7MEN1KMT2ALMNA
SCHEMBL10186364 0.75 SLC6A3 (0.34) MEN1KMT2AALDH1A1HTTMAPT
SCHEMBL98547 0.74 SMN1; SMN2 (0.43) MEN1KMT2AALDH1A1HTTMAPT
SCHEMBL13209947 0.74 ALDH1A1 (0.45) MEN1KMT2AALDH1A1HTTLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 250 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 US disclosed
US-11822240-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US disclosed
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-20230314945-A1 NEGATIVE-TONE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-05 US disclosed
US-11762288-B2 Resist composition, method of forming resist pattern, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-19 US disclosed
US-11754922-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-11747726-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-05 US disclosed
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 US disclosed
US-20120015299-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-19 US disclosed
US-20110287362-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2011-11-24 US disclosed
US-20110262872-A1 METHOD OF FORMING RESIST PATTERN AND RESIST COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-27 US disclosed
US-20110262864-A1 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-27 US disclosed
US-20110244399-A1 METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-06 US disclosed
US-20110165512-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-07-07 US disclosed
US-20110097667-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-04-28 US disclosed
US-20100273105-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-10-28 US disclosed
US-20100081086-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-01 US disclosed
US-20100047724-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-02-25 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100273105-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR RER1, GLRA1, GRIN1 P2RX7 876/4885MEN1 153/4885KMT2A 2015/4885
US-11709425-B2 Resist composition and method of forming resist pattern RER1, RRS1, RXFP4 P2RX7 4194/4885MEN1 1046/4885KMT2A 2140/4885
US-20120015299-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ASIC1, ABCC1 P2RX7 1348/4885MEN1 549/4885KMT2A 3017/4885
US-20110287362-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ASIC1, SCO2 P2RX7 818/4885MEN1 321/4885KMT2A 2373/4885
US-20110262872-A1 METHOD OF FORMING RESIST PATTERN AND RESIST COMPOSITION POLR1A, PARG, POLR1G P2RX7 4003/4885MEN1 963/4885KMT2A 742/4885
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent MRPS23, MRPS22, SLC11A2 P2RX7 3616/4885MEN1 1142/4885KMT2A 2337/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.