Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.41 |
| ▸ | LMNA | P02545 | 2/20 | 0.39 |
| ▸ | TYR | P14679 | 1/20 | 0.39 |
| ▸ | GAA | P10253 | 2/20 | 0.38 |
| ▸ | SIGMAR1 | Q99720 | 1/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.35 |
| ▸ | RAB9A | P51151 | 4/20 | 0.35 |
| ▸ | NPC1 | O15118 | 3/20 | 0.35 |
| ▸ | MAPT | P10636 | 3/20 | 0.35 |
| ▸ | HTT | P42858 | 2/20 | 0.35 |
| ▸ | KIF11 | P52732 | 1/20 | 0.34 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.34 |
| ▸ | MEN1 | O00255 | 2/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.34 |
| ▸ | HRH3 | Q9Y5N1 | 2/20 | 0.34 |
| ▸ | HPGD | P15428 | 2/20 | 0.33 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.33 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.33 |
| ▸ | MITF | O75030 | 1/20 | 0.33 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL107600 | 0.98 | TSHR (0.42) | TSHRLMNATYRGAASIGMAR1 | |
| Bromide SCHEMBL1923160 | 0.96 | TSHR (0.41) | TSHRLMNATYRGAASIGMAR1 | |
| SCHEMBL1696855 | 0.79 | RAB9A (0.41) | TSHRLMNATYRSIGMAR1SMN1; SMN2 | |
| SCHEMBL12257129 | 0.78 | CNR2 (0.41) | LMNASMN1; SMN2RAB9ANPC1MAPT | |
| SCHEMBL4569615 | 0.78 | TSHR (0.37) | TSHRLMNATYRGAASMN1; SMN2 | |
| Hydrochloric Acid SCHEMBL31108772 | 0.78 | RAB9A (0.41) | TSHRLMNATYRSIGMAR1SMN1; SMN2 | |
| SCHEMBL7057650 | 0.76 | LMNA (0.39) | TSHRLMNAGAASMN1; SMN2RAB9A | |
| SCHEMBL137128 | 0.75 | ACHE (0.40) | LMNAGAASMN1; SMN2ALDH1A1 | |
| SCHEMBL7059010 | 0.74 | LMNA (0.38) | TSHRLMNAGAASMN1; SMN2RAB9A | |
| SCHEMBL31400064 | 0.72 | RAB9A (0.40) | TSHRLMNATYRSIGMAR1SMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 256 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20170293223-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID DIFFUSION CONTROL AGENT | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-10-12 | — | — | US | disclosed |
| US-20170293223-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID DIFFUSION CONTROL AGENT | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-10-12 | — | — | US | disclosed |
| US-20170285469-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO, CO., LTD. (JP) | 2017-10-05 | — | — | US | disclosed |
| US-20170285469-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO, CO., LTD. (JP) | 2017-10-05 | — | — | US | disclosed |
| US-9776208-B2 | Brush composition, and method of producing structure containing phase-separated structure | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-10-03 | — | — | US | disclosed |
| US-9778567-B2 | Resist composition, method of forming resist pattern, polymeric compound, compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-10-03 | — | — | US | disclosed |
| US-9778567-B2 | Resist composition, method of forming resist pattern, polymeric compound, compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-10-03 | — | — | US | disclosed |
| US-9776208-B2 | Brush composition, and method of producing structure containing phase-separated structure | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-10-03 | — | — | US | disclosed |
| US-9766541-B2 | Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9766541-B2 | Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-09-19 | — | — | US | disclosed |
| US-20110318688-A1 | SALT, ACID GENERATOR AND RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110287362-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-11-24 | — | — | US | disclosed |
| US-20110244392-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-06 | — | — | US | disclosed |
| US-20110236824-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110217654-A1 | Latent acids and their use | BASF SE (DE) | 2011-09-08 | — | — | US | disclosed |
| US-7927780-B2 | Resist composition, method of forming resist pattern, novel compound and method of producing the same, and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-04-19 | — | — | US | disclosed |
| US-20100273105-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-10-28 | — | — | US | disclosed |
| US-20090068591-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20030134227-A1 | Cyclic sulfonium and sulfoxonium photoacid generators and photoresists comprising same | SHIPLEY COMPANY, LLC | 2003-07-17 | — | — | US | disclosed |
| EP-1308781-A2 | Cyclic sulfonium and sulfoxonium photoacid generators and photoresists containing them | Shipley Co. L.L.C. (US) | 2003-05-07 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100273105-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR | RER1, GLRA1, GRIN1 | TSHR 1039/4885LMNA 1119/4885TYR 3382/4885 |
| US-20110287362-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | RER1, ASIC1, SCO2 | TSHR 1201/4885LMNA 3383/4885TYR 3272/4885 |
| US-20090068591-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR | RER1, C1R, ABCC1 | TSHR 2770/4885LMNA 1612/4885TYR 3171/4885 |
| US-20110318688-A1 | SALT, ACID GENERATOR AND RESIST COMPOSITION | RER1, FGFR1, NHERF1 | TSHR 550/4885LMNA 3432/4885TYR 3761/4885 |
| US-20110217654-A1 | Latent acids and their use | NR1H3, NR1H2, NR2E3 | TSHR 117/4885LMNA 932/4885TYR 3915/4885 |
| US-20170293223-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID DIFFUSION CONTROL AGENT | SLC11A2, DRD1, ZYX | TSHR 4068/4885LMNA 2026/4885TYR 1067/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.