Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX1 | P07099 | 4/20 | 0.47 |
| ▸ | HDAC6 | Q9UBN7 | 6/20 | 0.46 |
| ▸ | MLYCD | O95822 | 1/20 | 0.46 |
| ▸ | CA2 | P00918 | 2/20 | 0.45 |
| ▸ | CA12 | O43570 | 1/20 | 0.45 |
| ▸ | CA1 | P00915 | 1/20 | 0.45 |
| ▸ | MMP1 | P03956 | 1/20 | 0.45 |
| ▸ | MMP2 | P08253 | 1/20 | 0.45 |
| ▸ | MMP3 | P08254 | 1/20 | 0.45 |
| ▸ | MMP9 | P14780 | 1/20 | 0.45 |
| ▸ | MMP8 | P22894 | 1/20 | 0.45 |
| ▸ | CA9 | Q16790 | 1/20 | 0.45 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.44 |
| ▸ | HDAC4 | P56524 | 3/20 | 0.43 |
| ▸ | HDAC3 | O15379 | 2/20 | 0.43 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.43 |
| ▸ | OPRK1 | P41145 | 2/20 | 0.40 |
| ▸ | HRH3 | Q9Y5N1 | 1/20 | 0.38 |
| ▸ | POLB | P06746 | 1/20 | 0.37 |
| ▸ | OPRD1 | P41143 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16301152 | 0.82 | HDAC6 (0.32) | EPHX1HDAC6MLYCDHDAC4HDAC3 | |
| SCHEMBL3379859 | 0.80 | HDAC6 (0.55) | EPHX1HDAC6MLYCDCA2CA12 | |
| SCHEMBL3381027 | 0.78 | HDAC6 (0.53) | EPHX1HDAC6MLYCDCA2CA12 | |
| SCHEMBL12073329 | 0.77 | EPHX1 (0.52) | EPHX1HDAC6MLYCDCA2CA12 | |
| SCHEMBL10248340 | 0.77 | EPHX1 (0.56) | EPHX1HDAC6MLYCDCA2CA12 | |
| SCHEMBL10284305 | 0.75 | ALDH1A1 (0.36) | POLB | |
| SCHEMBL1709299 | 0.74 | EPHX1 (0.57) | EPHX1HDAC6MLYCDCA2CA12 | |
| SCHEMBL19652077 | 0.74 | EPHX1 (0.57) | EPHX1HDAC6MLYCDCA2CA12 | |
| SCHEMBL3383177 | 0.74 | HDAC6 (0.49) | EPHX1HDAC6MLYCDCA2CA12 | |
| SCHEMBL12994508 | 0.74 | EPHX1 (0.41) | EPHX1HDAC6MLYCDCA2CA12 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 127 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10705428-B2 | Organic processing liquid for patterning chemical amplification resist film, container for organic processing liquid for patterning chemical amplification resist film, and pattern forming method, method of manufacturing electronic device, and electronic device using the same | FUJIFILM CORPORATION (JP) | 2020-07-07 | — | — | US | disclosed |
| US-10649329-B2 | Active light sensitive or radiation sensitive resin composition, active light sensitive or radiation sensitive film, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2020-05-12 | — | — | US | disclosed |
| US-10303058-B2 | Pattern forming method, treating agent, electronic device, and method for manufacturing the same | FUJIFILM CORPORATION (JP) | 2019-05-28 | — | — | US | disclosed |
| US-10248019-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | FUJIFILM CORPORATION (JP) | 2019-04-02 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9885956-B2 | Pattern forming method, and, electronic device producing method and electronic device, each using the same | FUJIFILM CORPORATION (JP) | 2018-02-06 | — | — | US | disclosed |
| US-9810981-B2 | Pattern formation method, etching method, electronic device manufacturing method, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-07 | — | — | US | disclosed |
| US-20170184973-A1 | ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-29 | — | — | US | disclosed |
| US-20170115571-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-20170102618-A1 | METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2017-04-13 | — | — | US | disclosed |
| US-20130004740-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD EACH USING THE COMPOSITION, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20120237874-A1 | Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition | FUJIFILM CORPORATION (JP) | 2012-09-20 | — | — | US | disclosed |
| US-20120237874-A1 | Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition | FUJIFILM CORPORATION (JP) | 2012-09-20 | — | — | US | disclosed |
| US-20120164574-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-06-28 | — | — | US | disclosed |
| WO-2012074122-A1 | NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2012-06-07 | — | — | WO | disclosed |
| US-20120077122-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20120076996-A1 | RESIST COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| WO-2012002519-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | WO | disclosed |
| US-20110027716-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-02-03 | — | — | US | disclosed |
| US-20110027716-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-02-03 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170184973-A1 | ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE | MYB, NCL, SMYD2 | EPHX1 4059/4885HDAC6 4421/4885MLYCD 34/4885 |
| US-20120237874-A1 | Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition | RER1, RXRA, XRN2 | EPHX1 539/4885HDAC6 2540/4885MLYCD 4797/4885 |
| US-10248019-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | ACTR3, RXRA, RARA | EPHX1 520/4885HDAC6 2631/4885MLYCD 4519/4885 |
| US-20110027716-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION | RER1, RXRA, XRN2 | EPHX1 539/4885HDAC6 2540/4885MLYCD 4797/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.