SCHEMBL9968686

SCHEMBL9968686

CCC(C)(C)C(=O)OCCOC(=O)C(C)(F)F

nearest known ligand 0.35

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
CYP4F2 P78329 1/20 0.35
CYP4A11 Q02928 1/20 0.35
HMGCR P04035 1/20 0.31
ALDH1A1 P00352 1/20 0.30
TSHR P16473 1/20 0.30
RIPK1 Q13546 1/20 0.30
THRB P10828 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25667373 0.92 CYP4F2 (0.37) CYP4F2CYP4A11ALDH1A1TSHR
SCHEMBL824523 0.89 CYP4F2 (0.41) CYP4F2CYP4A11HMGCRALDH1A1TSHR
SCHEMBL2625620 0.88 CYP4F2 (0.35) CYP4F2CYP4A11HMGCRALDH1A1TSHR
SCHEMBL25667376 0.88 CYP4F2 (0.35) CYP4F2CYP4A11HMGCRRIPK1
SCHEMBL2625602 0.84 CYP4F2 (0.33) CYP4F2CYP4A11
SCHEMBL9883777 0.83 CYP4F2 (0.41) CYP4F2CYP4A11HMGCRALDH1A1TSHR
SCHEMBL2625611 0.82 CYP4F2 (0.33) CYP4F2CYP4A11HMGCR
SCHEMBL14134179 0.82 DGKA (0.33) CYP4F2CYP4A11
SCHEMBL9924515 0.82 POLB (0.33) CYP4F2CYP4A11ALDH1A1TSHR
SCHEMBL9239574 0.82 CYP4F2 (0.38) CYP4F2CYP4A11HMGCRRIPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 122 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240219830-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-07-04 US disclosed
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-06-27 US disclosed
US-11840503-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-12-12 US disclosed
US-11822244-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11820735-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11822241-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11820736-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11815813-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-14 US disclosed
US-20230333478-A1 PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND KIT FUJIFILM CORPORATION (JP) 2023-10-19 US disclosed
US-11782342-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-10-10 US disclosed
US-20150212408-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-07-30 US disclosed
US-20150212407-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-07-30 US disclosed
US-20150168828-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-18 US disclosed
US-20150153644-A1 RESIN, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-04 US disclosed
US-20150147695-A1 RESIN, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-05-28 US disclosed
US-20150118620-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-04-30 US disclosed
US-20150118619-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-04-30 US disclosed
US-20150064622-A1 COMPOUND, RESIN, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-03-05 US disclosed
US-20140030654-A1 PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-01-30 US disclosed
US-20120156620-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-06-21 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11820735-B2 Salt, acid generator, resist composition and method for producing resist pattern RER1, LPAR1, TLR7 CYP4F2 1598/4885CYP4A11 1265/4885HMGCR 1953/4885
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SCO2, CBR1, OXGR1 CYP4F2 890/4885CYP4A11 783/4885HMGCR 995/4885
US-11782342-B2 Salt and photoresist composition containing the same CRY1, REN, SLC6A19 CYP4F2 2328/4885CYP4A11 282/4885HMGCR 692/4885
US-11822244-B2 Compound, resin, resist composition and method for producing resist pattern RER1, AFF1, AFF4 CYP4F2 1438/4885CYP4A11 2063/4885HMGCR 2679/4885
US-20240219830-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN H1-0, HCN3, RER1 CYP4F2 767/4885CYP4A11 495/4885HMGCR 1534/4885
US-11820736-B2 Salt, acid generator, resist composition and method for producing resist pattern H1-10, H1-0, H1-2 CYP4F2 2956/4885CYP4A11 867/4885HMGCR 1093/4885
US-11822241-B2 Salt, acid generator, resist composition and method for producing resist pattern H1-10, H1-0, CHRM1 CYP4F2 2140/4885CYP4A11 951/4885HMGCR 1656/4885
US-20150212407-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME HAX1, XBP1, AP1S1 CYP4F2 1551/4885CYP4A11 262/4885HMGCR 2904/4885
US-11840503-B2 Salt, acid generator, resist composition and method for producing resist pattern RER1, H1-0, CA7 CYP4F2 1143/4885CYP4A11 1039/4885HMGCR 3063/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.