SCHEMBL686330

SCHEMBL686330

O=C(C[S+]1CCCC1)c1ccc(CO)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MMP2 P08253 1/20 0.38
MMP9 P14780 1/20 0.38
MMP8 P22894 1/20 0.38
PRSS1 P07477 1/20 0.37
PRSS2 P07478 1/20 0.37
PRSS3 P35030 1/20 0.37
SLC6A2 P23975 1/20 0.37
SLC6A3 Q01959 1/20 0.37
HDAC1 Q13547 3/20 0.35
HDAC6 Q9UBN7 3/20 0.35
EPHX2 P34913 1/20 0.34
ADRB2 P07550 1/20 0.34
ADRB1 P08588 1/20 0.34
ADRB3 P13945 1/20 0.34
NPC1 O15118 3/20 0.33
RAB9A P51151 2/20 0.33
PKM P14618 1/20 0.33
HDAC8 Q9BY41 1/20 0.33
KDM4E B2RXH2 1/20 0.32
ALDH1A1 P00352 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL106663 0.81 NPC1 (0.48) NPC1RAB9APKMKDM4EALDH1A1
SCHEMBL685335 0.80 PTGS1 (0.42) ADRB3NPC1RAB9AALDH1A1POLB
SCHEMBL10122613 0.80 GSK3B (0.52) HDAC1HDAC6NPC1RAB9AHDAC8
SCHEMBL10122612 0.80 GSK3B (0.52) NPC1RAB9AKDM4EALDH1A1L3MBTL1
SCHEMBL686324 0.80 GSK3B (0.50) HDAC1HDAC6NPC1RAB9AHDAC8
SCHEMBL6117602 0.80 NPC1 (0.50) NPC1RAB9AKDM4EALDH1A1CASP7
SCHEMBL98167 0.79 KMT2A (0.50) HDAC1HDAC6NPC1RAB9AHDAC8
SCHEMBL685953 0.79 THRA (0.51) ALDH1A1HPGD
Bromide SCHEMBL2521756 0.79 GSK3B (0.48) HDAC1HDAC6NPC1RAB9AHDAC8
SCHEMBL2184879 0.79 NPC1 (0.48) NPC1RAB9AKDM4ECA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 56 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 US disclosed
US-11703756-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-9429841-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-30 US disclosed
US-9405187-B2 Salt, acid generator and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-08-02 US disclosed
US-9346750-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-24 US disclosed
US-9268226-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-23 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9051405-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-09 US disclosed
US-8993210-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-03-31 US disclosed
US-8916330-B2 Chemically amplified photoresist composition and method for forming resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-12-23 US disclosed
US-20110091818-A1 PROCESS FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-04-21 US disclosed
US-20110076617-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-31 US disclosed
US-20110065047-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICHAL COMPANY, LIMITED (JP) 2011-03-17 US disclosed
US-20110065040-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-17 US disclosed
US-20110053086-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY,LIMITED (JP) 2011-03-03 US disclosed
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 US disclosed
US-20110020749-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND SALT EMPLOYED THEREIN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-27 US disclosed
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20100330497-A1 CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-30 US disclosed
US-20100323296-A1 RESIN AND RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-23 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709425-B2 Resist composition and method of forming resist pattern RER1, RRS1, RXFP4 MMP2 3715/4885MMP9 3444/4885MMP8 3988/4885
US-20110065047-A1 PHOTORESIST COMPOSITION C1R, C1S, RER1 MMP2 4497/4885MMP9 4367/4885MMP8 4189/4885
US-20110065040-A1 PHOTORESIST COMPOSITION C1R, P4HA1, C1S MMP2 4462/4885MMP9 4266/4885MMP8 4335/4885
US-20110020749-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND SALT EMPLOYED THEREIN RER1, RARA, RARG MMP2 4440/4885MMP9 4200/4885MMP8 4139/4885
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, NPPA, ERCC4 MMP2 1981/4885MMP9 1052/4885MMP8 925/4885
US-20110053086-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN OR10J3, C1R, C9 MMP2 3422/4885MMP9 2407/4885MMP8 2607/4885
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME RCOR3, RCN1, HRH4 MMP2 4612/4885MMP9 3220/4885MMP8 2017/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.