Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GSK3B | P49841 | 1/20 | 0.50 |
| ▸ | NPC1 | O15118 | 8/20 | 0.47 |
| ▸ | RAB9A | P51151 | 8/20 | 0.47 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.47 |
| ▸ | MEN1 | O00255 | 2/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.43 |
| ▸ | LMNA | P02545 | 2/20 | 0.43 |
| ▸ | CES2 | O00748 | 1/20 | 0.43 |
| ▸ | CES1 | P23141 | 1/20 | 0.43 |
| ▸ | MAPT | P10636 | 2/20 | 0.43 |
| ▸ | HDAC1 | Q13547 | 2/20 | 0.42 |
| ▸ | HDAC6 | Q9UBN7 | 2/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.42 |
| ▸ | GAA | P10253 | 1/20 | 0.41 |
| ▸ | CTNNB1 | P35222 | 1/20 | 0.41 |
| ▸ | WNT3A | P56704 | 1/20 | 0.41 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.41 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.41 |
| ▸ | DRD3 | P35462 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Bromide SCHEMBL2521756 | 0.98 | GSK3B (0.48) | GSK3BNPC1RAB9AKMT2AMEN1 | |
| SCHEMBL106663 | 0.83 | NPC1 (0.48) | NPC1RAB9AALDH1A1LMNAMAPT | |
| SCHEMBL10122613 | 0.81 | GSK3B (0.52) | GSK3BNPC1RAB9AKMT2AALDH1A1 | |
| SCHEMBL10122612 | 0.81 | GSK3B (0.52) | GSK3BNPC1RAB9AKMT2AALDH1A1 | |
| SCHEMBL98167 | 0.81 | KMT2A (0.50) | GSK3BNPC1RAB9AKMT2AMEN1 | |
| SCHEMBL13416189 | 0.81 | MEN1 (0.43) | NPC1RAB9AKMT2AMEN1ALDH1A1 | |
| SCHEMBL2603145 | 0.81 | HDAC3 (0.54) | GSK3BNPC1RAB9AKMT2AMEN1 | |
| SCHEMBL2184879 | 0.80 | NPC1 (0.48) | NPC1RAB9AKMT2AMEN1CES2 | |
| Hydrochloric Acid SCHEMBL4028699 | 0.79 | KMT2A (0.48) | GSK3BNPC1RAB9AKMT2AMEN1 | |
| Bromide SCHEMBL482705 | 0.79 | KMT2A (0.48) | GSK3BNPC1RAB9AKMT2AMEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 360 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11703756-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11181820-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2021-11-23 | — | — | US | disclosed |
| US-10766992-B2 | Resin and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2020-09-08 | — | — | US | disclosed |
| US-20200192220-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2020-06-18 | — | — | US | disclosed |
| US-10649329-B2 | Active light sensitive or radiation sensitive resin composition, active light sensitive or radiation sensitive film, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2020-05-12 | — | — | US | disclosed |
| US-10377692-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2019-08-13 | — | — | US | disclosed |
| US-20190196328-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2019-06-27 | — | — | US | disclosed |
| US-10248019-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | FUJIFILM CORPORATION (JP) | 2019-04-02 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-7241551-B2 | Positive-working resist composition | FUJIFILM CORPORATION (JP) | 2007-07-10 | — | — | US | disclosed |
| US-20070149702-A1 | Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED | 2007-06-28 | — | — | US | disclosed |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-31 | — | — | US | disclosed |
| US-7217493-B2 | acid-decomposable group-containing polysiloxane or polysilsesquioxane and a specific amount of an acid generator that generates a sulfonic acid, and an organic base; high sensitivity, high resolution and good line edge roughness | FUJIFILM CORPORATION (JP) | 2007-05-15 | — | — | US | disclosed |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-03 | — | — | US | disclosed |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
| US-20070072121-A1 | Positive resist composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-29 | — | — | US | disclosed |
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-7157206-B2 | Resin containing an acid-decomposable group such as bis(trifluoromethyl)methanol group, to generate alkali-soluble group, and acid generators selected from fluorine-substituted or non-fluorine substituted aromatic or aliphatic carboxylic acid generators or sulfonic acid generators; microlithography | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-02 | — | — | US | disclosed |
| US-7157208-B2 | Positive resist composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-02 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, NHERF1, HCN4 | GSK3B 4588/4885NPC1 2838/4885RAB9A 1529/4885 |
| US-10248019-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | ACTR3, RXRA, RARA | GSK3B 3786/4885NPC1 3368/4885RAB9A 1298/4885 |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN3, NHERF1, HCN4 | GSK3B 4629/4885NPC1 1262/4885RAB9A 2439/4885 |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN4, HCN3, HCN1 | GSK3B 4502/4885NPC1 1660/4885RAB9A 2745/4885 |
| US-10377692-B2 | Photoresist composition | C1R, C1S, F12 | GSK3B 4841/4885NPC1 3833/4885RAB9A 4156/4885 |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, RFC1, RFC2 | GSK3B 4688/4885NPC1 1664/4885RAB9A 2378/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.