Trifluoroacetic Acid

Trifluoroacetic Acid

SCHEMBL107376

O=C([O-])C(F)(F)F.c1ccc([I+]c2ccccc2)cc1

nearest known ligand 0.45

Full drug profile on Sugi Atlas →

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CES1 P23141 7/20 0.45
CA2 P00918 1/20 0.38
CA4 P22748 1/20 0.38
EDNRA P25101 1/20 0.36
PTPN1 P18031 1/20 0.34
FAAH O00519 3/20 0.34
HDAC6 Q9UBN7 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
CES2 O00748 1/20 0.33
FABP7 O15540 1/20 0.33
CPA1 P15085 1/20 0.33
KCNN1 Q92952 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoroacetic Acid SCHEMBL761109 0.85 EDNRA (0.47) CES1CA2EDNRACES2
Trifluoroacetic Acid SCHEMBL10492085 0.84 HDAC1 (0.46) HDAC6
Bicarbonate SCHEMBL108506 0.84 CA2 (0.46) CES1CA2CA4EDNRAHDAC6
Bicarbonate SCHEMBL105149 0.84 CA2 (0.46) CES1CA2CA4EDNRAHDAC6
Trichloroacetic Acid SCHEMBL108191 0.83 CYP1A2 (0.40) CES1CA2CA4EDNRACES2
Oxalic Acid SCHEMBL108407 0.81 CA4 (0.44) CES1CA2CA4EDNRAHDAC6
Trifluoroacetic Acid SCHEMBL10492025 0.81 SMN1; SMN2 (0.35) CES1HDAC6CES2
Trifluoroacetic Acid SCHEMBL10584037 0.81 LTA4H (0.44)
SCHEMBL104017 0.81 RIPK1 (0.39) CA2CA4HDAC6TDP1
SCHEMBL10601716 0.80 THRB (0.42) CES1CA2HDAC6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 429 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2026097702-A1 PHOTOSENSITIVE COMPOSITION, METHOD FOR PREPARING PATTERN, CURED PRODUCT, AND ELECTRONIC COMPONENT 江苏艾森半导体材料股份有限公司 2026-05-15 WO disclosed
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
EP-4592299-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-24 US disclosed
US-20250231491-A1 PHOTOLITHOGRAPHIC METHOD USING SILICON PHOTORESIST SUNTIFIC MATERIALS (WEIFANG)., LTD. (CN) 2025-07-17 US disclosed
US-20250231492-A1 MANUFACTURE OF INTEGRATED CIRUIT USING POSITIVE TONE PHOTOPATTERNABLE DIELECTRIC INCLUDING HIGH SILICON CONTENT POLYSILSESQUIOXANE SUNTIFIC MATERIALS (WEIFANG)., LTD. (CN) 2025-07-17 US disclosed
US-5498765-A Positive photoresist composition containing photoacid generator and use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1996-03-12 US disclosed
US-5432039-A Radiation sensitive quinone diazide and resin composition for microlens JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1995-07-11 US disclosed
US-5374500-A Positive photoresist composition containing photoacid generator and use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-12-20 US disclosed
EP-0619522-A2 Positive photoresist composition containing photoacid generator and use thereof INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-10-12 EP disclosed
EP-0594452-A2 Radiation sensitive resin composition for microlens JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1994-04-27 EP disclosed
US-5266444-A Positives photoimages with crosslinking and onium curing agent INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1993-11-30 US disclosed
EP-0530095-A1 Improved sensitization of photopolymerizable compositions MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1993-03-03 EP disclosed
US-5055439-A PHOTOACID GENERATING COMPOSITION AND SENSITIZER THEREFOR INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1991-10-08 US disclosed
EP-0435531-A2 Photoacid generating composition and sensitizer therefor International Business Machines Corporation (US) 1991-07-03 EP disclosed
US-4250053-A WITH FLUORESCENT COMPOUND MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1981-02-10 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS ASH2L, PUF60, IDUA CES1 4246/4885CA2 1064/4885CA4 749/4885
US-20260118767-A1 REVERSE PATTERNING PROCESS EFNA1, EPHA4, ETV6 CES1 2618/4885CA2 2902/4885CA4 281/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR CES1 3024/4885CA2 2105/4885CA4 1681/4885
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SMURF1, OSR1, SIK1 CES1 3505/4885CA2 972/4885CA4 440/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.