Trichloroacetic Acid

Trichloroacetic Acid

SCHEMBL108191

O=C([O-])C(Cl)(Cl)Cl.c1ccc([I+]c2ccccc2)cc1

nearest known ligand 0.40

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.40
CA2 P00918 1/20 0.38
CA4 P22748 1/20 0.38
ALDH1A1 P00352 7/20 0.36
HPGD P15428 2/20 0.36
KMT2A Q03164 2/20 0.36
MEN1 O00255 1/20 0.36
MAPT P10636 1/20 0.36
MAPK1 P28482 1/20 0.36
HTT P42858 1/20 0.36
CES2 O00748 2/20 0.33
CES1 P23141 2/20 0.33
KDM4E B2RXH2 1/20 0.33
GLA P06280 1/20 0.33
GAA P10253 1/20 0.33
ATM Q13315 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
RIPK1 Q13546 1/20 0.33
LMNA P02545 1/20 0.33
EDNRA P25101 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trichloroacetic Acid SCHEMBL11884932 0.84 PARP10 (0.43) CA2ALDH1A1HPGDKMT2AMEN1
Bicarbonate SCHEMBL108506 0.84 CA2 (0.46) CA2CA4ALDH1A1HPGDMAPT
Bicarbonate SCHEMBL105149 0.84 CA2 (0.46) CA2CA4ALDH1A1HPGDMAPT
Trichloroacetic Acid SCHEMBL11168363 0.83 CES2 (0.36) CYP1A2ALDH1A1HPGDKMT2AMEN1
Trifluoroacetic Acid SCHEMBL107376 0.83 CES1 (0.45) CA2CA4CES2CES1EDNRA
Oxalic Acid SCHEMBL108407 0.81 CA4 (0.44) CA2CA4ALDH1A1HPGDMAPT
SCHEMBL104017 0.81 RIPK1 (0.39) CA2CA4ALDH1A1KMT2AMEN1
Oxalic Acid SCHEMBL108586 0.79 CA2 (0.42) CA2CA4ALDH1A1HPGDMAPT
Acetic Acid SCHEMBL107583 0.79 CA2 (0.42) CA2CA4ALDH1A1MAPTCES2
Dichloroacetic Acid SCHEMBL107462 0.78 CA2 (0.38) CA2CA4ALDH1A1HPGDKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 108 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
EP-4592299-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-24 US disclosed
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
CN-112526822-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2025-02-28 CN disclosed
US-20080026322-A1 Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
EP-1867681-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2007-12-19 EP disclosed
EP-1845132-A2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shinetsu Chemical Co., Ltd. (JP) 2007-10-17 EP disclosed
US-20070238300-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. 2007-10-11 US disclosed
US-6231929-B1 APPLYING LIQUID TO SUBSTRATE 3M INNOVATIVE PROPERTIES COMPANY 2001-05-15 US disclosed
EP-0902797-B1 DURABLE, LOW SURFACE ENERGY COMPOUNDS AND ARTICLES, APPARATUSES, AND METHODS FOR USING THE SAME MINNESOTA MINING & MFG (US) 2000-11-15 EP disclosed
US-5998549-A REDUCE SURFACE STREAKING 3M INNOVATIVE PROPERTIES COMPANY (US) 1999-12-07 US disclosed
EP-0902797-A1 DURABLE, LOW SURFACE ENERGY COMPOUNDS AND ARTICLES, APPARATUSES, AND METHODS FOR USING THE SAME MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1999-03-24 EP disclosed
WO-1997046598-A1 DURABLE, LOW SURFACE ENERGY COMPOUNDS AND ARTICLES, APPARATUSES, AND METHODS FOR USING THE SAME MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1997-12-11 WO disclosed
US-4156046-A POLYEPOXIDES, EPOXY-TERMINATED SILANES MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1979-05-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SMC1A, CDH1, SMC4 CYP1A2 2249/4885CA2 3442/4885CA4 505/4885
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS ASH2L, PUF60, IDUA CYP1A2 4809/4885CA2 1064/4885CA4 749/4885
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process RPS4X, SIK3, MLX CYP1A2 2955/4885CA2 2255/4885CA4 1589/4885
US-20260118767-A1 REVERSE PATTERNING PROCESS EFNA1, EPHA4, ETV6 CYP1A2 4338/4885CA2 2902/4885CA4 281/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR CYP1A2 1818/4885CA2 2105/4885CA4 1681/4885
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SMURF1, OSR1, SIK1 CYP1A2 4634/4885CA2 972/4885CA4 440/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.