SCHEMBL109565

SCHEMBL109565

O=S(=O)(O)c1cc(C(F)(F)F)cc(C(F)(F)F)c1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES2 O00748 1/20 0.54
ACP1 P24666 1/20 0.46
MAPT P10636 4/20 0.45
CA1 P00915 2/20 0.44
CA2 P00918 2/20 0.44
MMP1 P03956 1/20 0.44
MMP2 P08253 1/20 0.44
MMP9 P14780 1/20 0.44
MMP8 P22894 1/20 0.44
MMP13 P45452 1/20 0.44
L3MBTL1 Q9Y468 2/20 0.42
NPSR1 Q6W5P4 2/20 0.42
GAA P10253 2/20 0.42
LMNA P02545 1/20 0.42
POLB P06746 1/20 0.42
KMT2A Q03164 1/20 0.42
CNR1 P21554 2/20 0.42
LCK P06239 1/20 0.41
FYN P06241 1/20 0.41
CA12 O43570 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9617536 0.98 CES2 (0.52) CES2ACP1MAPTCA1CA2
SCHEMBL21522543 0.98 CES2 (0.52) CES2ACP1MAPTCA1CA2
SCHEMBL21522570 0.98 CES2 (0.52) CES2ACP1MAPTCA1CA2
SCHEMBL21522647 0.98 CES2 (0.52) CES2ACP1MAPTCA1CA2
Trimethylammonium SCHEMBL4385863 0.92 CES2 (0.47) CES2ACP1MAPTCA1CA2
Tetramethylammonium Ion SCHEMBL5493903 0.92 CES2 (0.47) CES2ACP1MAPTCA1CA2
SCHEMBL3182026 0.87 CES2 (0.42) CES2ACP1MAPTCA1CA2
SCHEMBL11292063 0.86 ACP1 (0.49) CES2ACP1MAPTCA1CA2
SCHEMBL2758458 0.86 CES2 (0.41) CES2ACP1MAPTCA1CA2
SCHEMBL13277683 0.84 ACP1 (0.48) CES2ACP1MAPTCA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1733 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119153690-A Secondary battery, negative electrode plate and electricity utilization device 宁德时代新能源科技股份有限公司 2024-12-17 CN claimed
CN-114188583-A Composite proton exchange membrane and preparation method and application thereof 中汽创智科技有限公司 2022-03-15 CN claimed
CN-102584651-B Reduction method of sulfoacid UNIV ZHEJIANG 2013-12-18 CN claimed
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US claimed
CN-100339767-C Resist compositions WAKO PURE CHEM IND LTD (JP) 2007-09-26 CN claimed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US claimed
CN-1633628-A Resist compositions WAKO PURE CHEM IND LTD (JP) 2005-06-29 CN claimed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US claimed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP claimed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US claimed
US-12619152-B2 Method for producing actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, method for producing electronic device, and method for producing onium salt FUJIFILM CORPORATION (JP) 2026-05-05 US disclosed
US-12578648-B2 Rinsing liquid and pattern forming method FUJIFILM CORPORATION (JP) 2026-03-17 US disclosed
US-12554196-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, resist film, method for manufacturing electronic device, compound, and method for producing compound FUJIFILM CORPORATION (JP) 2026-02-17 US disclosed
US-12517431-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive composition, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2026-01-06 US disclosed
US-20260003270-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE FUJFILM CORP (JP) 2026-01-01 US disclosed
WO-2002019033-A2 PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME SHIPLEY COMPANY, L.L.C. (US) 2002-03-07 WO disclosed
US-20010038970-A1 Photoresist compositions comprising blends of photoacid generators SHIPLEY COMPANY, L.L.C. (US) 2001-11-08 US disclosed
US-6203965-B1 USEFUL AS DEEP ULTRAVIOLET RADIATION PHOTORESISTS SHIPLEY COMPANY, L.L.C. 2001-03-20 US disclosed
US-6200728-B1 Photoresist compositions comprising blends of photoacid generators SHIPLEY COMPANY, L.L.C. 2001-03-13 US disclosed
EP-1030221-A1 Photoresist compositions comprising blends of photoacid generators Shipley Company LLC (US) 2000-08-23 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12619152-B2 Method for producing actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, method for producing electronic device, and method for producing onium salt ROCK2, ROCK1, SLC9A5 CES2 2889/4885ACP1 2402/4885MAPT 1956/4885
US-12578648-B2 Rinsing liquid and pattern forming method ALKBH5, GABBR1, DNMT3B CES2 1577/4885ACP1 770/4885MAPT 1336/4885
US-20260003270-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE ACTN1, ACTR3, MACF1 CES2 1597/4885ACP1 160/4885MAPT 4009/4885
US-12554196-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, resist film, method for manufacturing electronic device, compound, and method for producing compound RER1, RAD51, GLRA1 CES2 2873/4885ACP1 3641/4885MAPT 3416/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.