SCHEMBL12419176

SCHEMBL12419176

CCC(C)(C)C(=O)OCc1cccc2c(C)cccc12

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 4/20 0.41
▸ KDM4E B2RXH2 2/20 0.41
▸ GLA P06280 1/20 0.41
▸ CYP1A2 P05177 1/20 0.37
▸ CYP2A6 P11509 1/20 0.37
▸ RIPK1 Q13546 5/20 0.37
▸ CASP1 P29466 1/20 0.36
▸ LMNA P02545 1/20 0.36
▸ L3MBTL1 Q9Y468 2/20 0.35
▸ MAOB P27338 1/20 0.35
▸ NLRP3 Q96P20 1/20 0.35
▸ HPGD P15428 1/20 0.34
▸ NPSR1 Q6W5P4 1/20 0.34
▸ HSD17B10 Q99714 1/20 0.34
▸ MAPT P10636 1/20 0.34
▸ POLB P06746 1/20 0.34
▸ ATM Q13315 1/20 0.33
▸ GABRA1 P14867 1/20 0.33
▸ GABRB2 P47870 1/20 0.33
▸ SMN1; SMN2 Q16637 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18671963 0.86 KDM4E (0.43) ALDH1A1KDM4EGLACYP1A2CYP2A6
SCHEMBL8738362 0.86 CDC25B (0.39) ALDH1A1RIPK1GABRA1GABRB2
SCHEMBL12419175 0.84 LMNA (0.41) ALDH1A1CYP1A2CYP2A6RIPK1LMNA
SCHEMBL12419185 0.84 RIPK1 (0.45) ALDH1A1KDM4EGLARIPK1LMNA
SCHEMBL12419171 0.84 ATM (0.49) ALDH1A1KDM4EL3MBTL1HPGDATM
SCHEMBL8737838 0.80 RIPK1 (0.40) KDM4ERIPK1L3MBTL1NPSR1
SCHEMBL9042937 0.79 ALDH1A1 (0.39) ALDH1A1KDM4EGLARIPK1LMNA
SCHEMBL13292523 0.78 MTNR1A (0.42) ALDH1A1KDM4EGLARIPK1ATM
SCHEMBL9044253 0.78 ALDH1A1 (0.38) ALDH1A1KDM4EGLALMNAL3MBTL1
SCHEMBL29324088 0.77 IDH1 (0.42) ALDH1A1KDM4EGLAATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20220404701-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-12-22 — — US disclosed
US-20180180998-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-28 — — US disclosed
US-20180039175-A1 NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-08 — — US disclosed
US-9740098-B2 Chemically amplified negative resist composition using novel onium salt and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 — — US disclosed
US-9604921-B2 Sulfonium salt, resist composition and resist pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-03-28 — — US disclosed
US-20160299428-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-13 — — US disclosed
US-9436083-B2 Chemically-amplified negative resist composition and resist patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-09-06 — — US disclosed
US-9329476-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-03 — — US disclosed
US-20160090355-A1 SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-03-31 — — US disclosed
US-20150268556-A1 CHEMICALLY-AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-24 — — US disclosed
US-20150198877-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-16 — — US disclosed
US-20110171579-A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180180998-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SLC11A2, POLR2B, POLI ALDH1A1 3949/4885KDM4E 3446/4885GLA 1577/4885
US-20160090355-A1 SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS ETV6, ETV1, EIF2B3 ALDH1A1 3354/4885KDM4E 591/4885GLA 1573/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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