SCHEMBL13144175

SCHEMBL13144175

CCC(C)c1ccc(C(=O)n2c3ccccc3c(=O)c3ccccc32)cc1

nearest known ligand 0.61

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
▸ P2RX4 Q99571 2/20 0.61
▸ LMNA P02545 2/20 0.52
▸ MAPT P10636 2/20 0.52
▸ HTT P42858 2/20 0.52
▸ PTGS2 P35354 4/20 0.50
▸ ALDH1A1 P00352 2/20 0.49
▸ MEN1 O00255 1/20 0.49
▸ HPGD P15428 1/20 0.49
▸ KMT2A Q03164 1/20 0.49
▸ SMN1; SMN2 Q16637 1/20 0.49
▸ NPSR1 Q6W5P4 1/20 0.49
▸ ABCB1 P08183 2/20 0.42
▸ AGTR1 P30556 1/20 0.41
▸ NTRK1 P04629 1/20 0.41
▸ PTGS1 P23219 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13144176 0.93 LMNA (0.60) P2RX4LMNAMAPTHTTPTGS2
SCHEMBL10178704 0.82 PTGS2 (0.54) P2RX4PTGS2ALDH1A1NTRK1
SCHEMBL10180106 0.80 PTGS2 (0.52) P2RX4LMNAPTGS2ALDH1A1MEN1
SCHEMBL13144229 0.78 LMNA (0.49) P2RX4LMNAMAPTHTTALDH1A1
SCHEMBL12611492 0.77 P2RX4 (1.00) P2RX4LMNAMAPTHTTALDH1A1
SCHEMBL6722016 0.75 P2RX4 (0.64) P2RX4PTGS2ALDH1A1MEN1KMT2A
SCHEMBL10180072 0.74 PTGS2 (0.45) P2RX4LMNAHTTPTGS2ALDH1A1
SCHEMBL13144182 0.73 LMNA (0.44) LMNAMAPTALDH1A1KMT2ASMN1; SMN2
SCHEMBL13144174 0.72 ALDH1A1 (0.44) LMNAMAPTALDH1A1MEN1KMT2A
SCHEMBL10178700 0.72 HTR7 (0.45) LMNAPTGS2ALDH1A1MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7799506-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2010-09-21 — — US disclosed
US-20090087776-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 — — US disclosed
Send feedback