SCHEMBL13638396

SCHEMBL13638396

CC(C)(C)C(=O)OC(C)(C)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.42

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.38
MAPK1 P28482 1/20 0.38
KMT2A Q03164 1/20 0.38
CYP17A1 P05093 3/20 0.36
CYP19A1 P11511 3/20 0.36
EPHX2 P34913 3/20 0.36
ALOX15 P16050 1/20 0.33
LMNA P02545 1/20 0.33
GLA P06280 1/20 0.33
EPHX1 P07099 1/20 0.32
ALDH1A1 P00352 3/20 0.32
HTT P42858 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20962055 0.85 MEN1 (0.36) MEN1MAPK1KMT2ACYP17A1CYP19A1
SCHEMBL14802919 0.84 MEN1 (0.36) MEN1MAPK1KMT2ACYP17A1CYP19A1
SCHEMBL26939587 0.84 MEN1 (0.36) MEN1MAPK1KMT2ACYP17A1CYP19A1
SCHEMBL441785 0.82 MEN1 (0.39) MEN1MAPK1KMT2ACYP17A1CYP19A1
SCHEMBL3290691 0.82 MEN1 (0.39) MEN1MAPK1KMT2ACYP17A1CYP19A1
SCHEMBL47390 0.82 KMT2A (0.35) MEN1MAPK1KMT2ACYP17A1CYP19A1
SCHEMBL112620 0.81 MEN1 (0.38) MEN1MAPK1KMT2ACYP17A1CYP19A1
SCHEMBL14838346 0.81 MEN1 (0.38) MEN1MAPK1KMT2ACYP17A1CYP19A1
SCHEMBL4903544 0.81 EPHX2 (0.39) MEN1MAPK1KMT2ACYP17A1CYP19A1
SCHEMBL13527866 0.81 MEN1 (0.38) MEN1MAPK1KMT2ACYP17A1CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10781198-B2 Compound, resin, photoresist composition and process for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-22 US disclosed
US-9850334-B2 Manufacturing method of polymer TOYO GOSEI CO., LTD. (JP) 2017-12-26 US disclosed
US-20170329223-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-11-16 US disclosed
US-9771346-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-09-26 US disclosed
US-9760005-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-09-12 US disclosed
US-9758466-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-09-12 US disclosed
US-20170176858-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2017-06-22 US disclosed
US-9644056-B2 Compound, resin and photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-05-09 US disclosed
US-9638996-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-05-02 US disclosed
US-9580402-B2 Salt, acid generator, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-02-28 US disclosed
US-20160130212-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-05-12 US disclosed
US-20160062233-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-03-03 US disclosed
US-20160062234-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-03-03 US disclosed
US-20160052877-A1 SALT, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-25 US disclosed
US-20160004155-A1 PHOTO ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-07 US disclosed
US-8956803-B2 Sulfonium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-17 US disclosed
US-7611820-B2 Positive resist composition and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2009-11-03 US disclosed
US-20080311514-A1 SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-18 US disclosed
EP-1764652-A2 Positive resist composition and pattern-forming method using the same FUJIFILM Corporation (JP) 2007-03-21 EP disclosed
US-20070059639-A1 Positive resist composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-15 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160062233-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN XDH, HAX1, MLX MEN1 3032/4885MAPK1 748/4885KMT2A 1132/4885
US-10781198-B2 Compound, resin, photoresist composition and process for producing photoresist pattern RER1, BRIX1, NR2E3 MEN1 2268/4885MAPK1 2902/4885KMT2A 1256/4885
US-20160130212-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN C1R, C9, RER1 MEN1 4027/4885MAPK1 3270/4885KMT2A 2102/4885
US-20080311514-A1 SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING STS, LSS, SRMS MEN1 1516/4885MAPK1 3970/4885KMT2A 1244/4885
US-20160052877-A1 SALT, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RER1, AFF1, FRG1 MEN1 3408/4885MAPK1 732/4885KMT2A 817/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.