SCHEMBL13683050

SCHEMBL13683050

CCC(C)C(=O)OCCOCOc1cccc(O)c1

nearest known ligand 0.43

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CHRNB2 P17787 1/20 0.43
CHRNA4 P43681 1/20 0.43
CYP3A4 P08684 1/20 0.40
TDP1 Q9NUW8 3/20 0.40
L3MBTL1 Q9Y468 3/20 0.40
MAPK1 P28482 3/20 0.38
CNR1 P21554 2/20 0.38
CNR2 P34972 2/20 0.38
APP P05067 1/20 0.37
MTNR1A P48039 1/20 0.37
MTNR1B P49286 1/20 0.37
TSHR P16473 2/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
ALDH1A1 P00352 1/20 0.36
KDM4E B2RXH2 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13683038 0.88 L3MBTL1 (0.52) TDP1L3MBTL1SMN1; SMN2
SCHEMBL13683026 0.86 TDP1 (0.46) TDP1MTNR1AMTNR1BTSHRSMN1; SMN2
SCHEMBL13683045 0.86 HTT (0.49) TDP1KDM4E
SCHEMBL13683048 0.85 LTA4H (0.41) TDP1MAPK1TSHRSMN1; SMN2ALDH1A1
SCHEMBL13683063 0.85 RXRA (0.46)
SCHEMBL13683061 0.82 PPARG (0.48) TDP1MAPK1SMN1; SMN2ALDH1A1KDM4E
SCHEMBL10030192 0.81 L3MBTL1 (0.50) TDP1L3MBTL1MAPK1MTNR1AMTNR1B
SCHEMBL13683040 0.80 MEN1 (0.48) TDP1L3MBTL1TSHRSMN1; SMN2ALDH1A1
SCHEMBL13683043 0.80 CHRNB2 (0.43) CHRNB2CHRNA4CYP3A4TDP1L3MBTL1
SCHEMBL13683054 0.79 MAPT (0.48) SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed