SCHEMBL13683038

SCHEMBL13683038

CCC(C)C(=O)OCCOCOc1cccc(C)c1

nearest known ligand 0.52

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 2/20 0.52
TDP1 Q9NUW8 1/20 0.52
SMN1; SMN2 Q16637 2/20 0.48
ALOX5 P09917 1/20 0.43
PPARG P37231 1/20 0.43
PPARA Q07869 1/20 0.43
POLB P06746 1/20 0.42
GAA P10253 2/20 0.42
KMT2A Q03164 1/20 0.42
LMNA P02545 2/20 0.42
ADRB2 P07550 1/20 0.41
ADRB1 P08588 1/20 0.41
HPGD P15428 1/20 0.41
DRD2 P14416 1/20 0.41
DRD4 P21917 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13683050 0.88 CHRNB2 (0.43) L3MBTL1TDP1SMN1; SMN2
SCHEMBL13683026 0.88 TDP1 (0.46) TDP1SMN1; SMN2KMT2ALMNAHPGD
SCHEMBL13683045 0.87 HTT (0.49) TDP1PPARGKMT2A
SCHEMBL13683040 0.86 MEN1 (0.48) L3MBTL1TDP1SMN1; SMN2ALOX5PPARG
SCHEMBL13683063 0.86 RXRA (0.46)
SCHEMBL13683061 0.83 PPARG (0.48) TDP1SMN1; SMN2PPARGPPARAPOLB
SCHEMBL10030192 0.82 L3MBTL1 (0.50) L3MBTL1TDP1SMN1; SMN2KMT2ALMNA
SCHEMBL13683048 0.81 LTA4H (0.41) TDP1SMN1; SMN2KMT2ALMNA
SCHEMBL13683054 0.80 MAPT (0.48) SMN1; SMN2ALOX5PPARGPPARAGAA
SCHEMBL12755247 0.80 L3MBTL1 (0.60) L3MBTL1TDP1SMN1; SMN2POLBADRB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed