Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DGKA | P23743 | 1/20 | 0.57 |
| ▸ | THRB | P10828 | 8/20 | 0.55 |
| ▸ | THRA | P10827 | 2/20 | 0.55 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.53 |
| ▸ | TLR2 | O60603 | 1/20 | 0.52 |
| ▸ | LMNA | P02545 | 2/20 | 0.51 |
| ▸ | MAPT | P10636 | 1/20 | 0.51 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.51 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.49 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.49 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.49 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.49 |
| ▸ | HTR2A | P28223 | 1/20 | 0.49 |
| ▸ | SCN1A | P35498 | 1/20 | 0.49 |
| ▸ | HTR2B | P41595 | 1/20 | 0.49 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.49 |
| ▸ | SCN2A | Q99250 | 1/20 | 0.49 |
| ▸ | SIGMAR1 | Q99720 | 1/20 | 0.49 |
| ▸ | SCN3A | Q9NY46 | 1/20 | 0.49 |
| ▸ | HRH3 | Q9Y5N1 | 1/20 | 0.49 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL20465870 | 1.00 | DGKA (0.57) | DGKATHRBTHRAALDH1A1TLR2 | |
| SCHEMBL143985 | 1.00 | DGKA (0.57) | DGKATHRBTHRAALDH1A1TLR2 | |
| SCHEMBL12120360 | 1.00 | DGKA (0.57) | DGKATHRBTHRAALDH1A1TLR2 | |
| SCHEMBL501472 | 1.00 | DGKA (0.57) | DGKATHRBTHRAALDH1A1TLR2 | |
| SCHEMBL14505693 | 1.00 | DGKA (0.57) | DGKATHRBTHRAALDH1A1TLR2 | |
| SCHEMBL142816 | 1.00 | DGKA (0.57) | DGKATHRBTHRAALDH1A1TLR2 | |
| SCHEMBL18697251 | 1.00 | DGKA (0.57) | DGKATHRBTHRAALDH1A1TLR2 | |
| SCHEMBL145889 | 1.00 | DGKA (0.57) | DGKATHRBTHRAALDH1A1TLR2 | |
| SCHEMBL145675 | 1.00 | DGKA (0.57) | DGKATHRBTHRAALDH1A1TLR2 | |
| SCHEMBL22451880 | 1.00 | DGKA (0.57) | DGKATHRBTHRAALDH1A1TLR2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 535 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4660703-A2 | METAL-CONTAINING FILM PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-12-10 | — | — | EP | disclosed |
| US-20250372377-A1 | METAL-CONTAINING FILM PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-12032287-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-09 | — | — | US | disclosed |
| US-11994798-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-28 | — | — | US | disclosed |
| US-20230400766-A1 | ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400766-A1 | ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-30 | — | — | US | disclosed |
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-30 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
| US-20070275326-A1 | Resist protective film composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-29 | — | — | US | disclosed |
| US-20070275326-A1 | Resist protective film composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-29 | — | — | US | disclosed |
| US-20070264592-A1 | Resist polymer, preparing method, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| EP-1829850-A2 | Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-09-05 | — | — | EP | disclosed |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-02 | — | — | US | disclosed |
| US-20070099114-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-03 | — | — | US | disclosed |
| US-20060093960-A1 | Fluorinated monomer having cyclic structure, manufacturing method, polymer, photoresist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2006-05-04 | — | — | US | disclosed |
| EP-1652844-A2 | Fluorinated monomer having cyclic structure, manufacturing method, polymer, photoresist composition and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2006-05-03 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | INSR, INSRR, SLC6A5 | DGKA 257/4885THRB 1228/4885THRA 1498/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | DGKA 1588/4885THRB 3341/4885THRA 3472/4885 |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | AFF1, FASN, FAR1 | DGKA 1639/4885THRB 577/4885THRA 330/4885 |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, COL1A1, RAD51 | DGKA 3454/4885THRB 2913/4885THRA 2867/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.