Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.54 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.51 |
| ▸ | ATM | Q13315 | 1/20 | 0.49 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.47 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.46 |
| ▸ | GAA | P10253 | 2/20 | 0.46 |
| ▸ | LMNA | P02545 | 1/20 | 0.46 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.46 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.45 |
| ▸ | HPGD | P15428 | 1/20 | 0.44 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.43 |
| ▸ | GLA | P06280 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3862994 | 0.90 | KMT2A (0.48) | ALDH1A1TDP1ATMSMN1; SMN2L3MBTL1 | |
| SCHEMBL145368 | 0.88 | TDP1 (0.50) | ALDH1A1TDP1ATMSMN1; SMN2L3MBTL1 | |
| SCHEMBL146521 | 0.86 | TDP1 (0.49) | ALDH1A1TDP1ATMSMN1; SMN2L3MBTL1 | |
| SCHEMBL22306519 | 0.86 | TDP1 (0.49) | ALDH1A1TDP1ATMSMN1; SMN2L3MBTL1 | |
| SCHEMBL20280767 | 0.85 | ALDH1A1 (0.57) | ALDH1A1TDP1ATMSMN1; SMN2L3MBTL1 | |
| SCHEMBL65505 | 0.85 | ALDH1A1 (0.52) | ALDH1A1TDP1ATMSMN1; SMN2L3MBTL1 | |
| SCHEMBL22421750 | 0.85 | ALDH1A1 (0.55) | ALDH1A1ATMSMN1; SMN2L3MBTL1GAA | |
| SCHEMBL65238 | 0.84 | SIGMAR1 (0.46) | ALDH1A1KMT2AKDM4ECYP1A2 | |
| SCHEMBL4184236 | 0.83 | ALDH1A1 (0.56) | ALDH1A1TDP1ATMSMN1; SMN2L3MBTL1 | |
| SCHEMBL502139 | 0.83 | KMT2A (0.46) | KMT2AKDM4EHPGDCYP1A2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 230 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4660703-A2 | METAL-CONTAINING FILM PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-12-10 | — | — | EP | disclosed |
| US-20250372377-A1 | METAL-CONTAINING FILM PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| US-12032287-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-09 | — | — | US | disclosed |
| US-11994798-B2 | Resist material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-28 | — | — | US | disclosed |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-20220127225-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-04-28 | — | — | US | disclosed |
| US-20210188770-A1 | ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-06-24 | — | — | US | disclosed |
| US-20080008961-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
| US-20070264592-A1 | Resist polymer, preparing method, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| EP-1829850-A2 | Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-09-05 | — | — | EP | disclosed |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-02 | — | — | US | disclosed |
| US-20070099114-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-03 | — | — | US | disclosed |
| US-6749988-B2 | PREVENTING A RESIST FILM FROM THINNING AND ALSO FOR ENHANCING THE RESOLUTION AND FOCUS MARGIN OF RESIST; HETEROCYCLIC AMINE COMPOUNDS HAVING A HYDRATING GROUP SUCH AS A HYDROXY, ETHER, ESTER, CARBONYL, CARBONATE GROUP OR LACTONE RING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-06-15 | — | — | US | disclosed |
| US-20020098443-A1 | Amine compounds, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-07-25 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SLC6A9, SLC6A5, REN | ALDH1A1 3949/4885TDP1 4505/4885ATM 4600/4885 |
| US-20020098443-A1 | Amine compounds, resist compositions and patterning process | PARG, EHMT1, EHMT2 | ALDH1A1 4186/4885TDP1 3409/4885ATM 2140/4885 |
| US-20220127225-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | CACNA1F, SLC6A5, IDUA | ALDH1A1 3860/4885TDP1 3589/4885ATM 3599/4885 |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | IDUA, SLC6A5, SLC6A9 | ALDH1A1 4322/4885TDP1 4190/4885ATM 3826/4885 |
| US-20210188770-A1 | ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SLC6A5, LIFR, SLC6A9 | ALDH1A1 4242/4885TDP1 4383/4885ATM 3987/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | ALDH1A1 2781/4885TDP1 4617/4885ATM 1421/4885 |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | AFF1, FASN, FAR1 | ALDH1A1 1887/4885TDP1 4246/4885ATM 391/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.