Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2D6 | P10635 | 1/20 | 0.35 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.35 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.35 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.35 |
| ▸ | RET | P07949 | 1/20 | 0.32 |
| ▸ | MAPK14 | Q16539 | 1/20 | 0.32 |
| ▸ | CAMK1D | Q8IU85 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19139246 | 0.85 | RET (0.41) | CYP2D6SLC6A2SLC6A4SLC6A3RET | |
| SCHEMBL10447713 | 0.85 | RET (0.41) | CYP2D6SLC6A2SLC6A4SLC6A3RET | |
| SCHEMBL18714176 | 0.77 | CYP2D6 (0.37) | CYP2D6SLC6A2SLC6A4SLC6A3 | |
| SCHEMBL12873202 | 0.75 | RET (0.31) | RETMAPK14CAMK1D | |
| SCHEMBL6202519 | 0.72 | RET (0.35) | RETMAPK14CAMK1D | |
| SCHEMBL9793694 | 0.68 | RET (0.36) | RETMAPK14CAMK1D | |
| SCHEMBL9793697 | 0.68 | RET (0.36) | RETMAPK14CAMK1D | |
| SCHEMBL11602001 | 0.68 | RET (0.42) | RETMAPK14CAMK1D | |
| SCHEMBL15448355 | 0.67 | CYP2D6 (0.34) | CYP2D6SLC6A2SLC6A4SLC6A3 | |
| SCHEMBL11603418 | 0.67 | RET (0.41) | RETMAPK14CAMK1D |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-11333974-B2 | Onium salt, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-05-17 | — | — | US | disclosed |
| US-11215926-B2 | Sulfonium compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-04 | — | — | US | disclosed |
| US-20200159115-A1 | NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-05-21 | — | — | US | disclosed |
| US-20200133122-A1 | NOVEL ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-04-30 | — | — | US | disclosed |
| US-10025180-B2 | Sulfonium compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-07-17 | — | — | US | disclosed |
| US-9989847-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-05 | — | — | US | disclosed |
| US-20180099928-A1 | SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-04-12 | — | — | US | disclosed |
| US-20180059543-A1 | SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-01 | — | — | US | disclosed |
| US-20170329227-A1 | NOVEL SULFONIUM COMPOUND, MAKING METHOD, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-11-16 | — | — | US | disclosed |
| US-9366958-B2 | Photoacid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-14 | — | — | US | disclosed |
| US-20160131972-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-12 | — | — | US | disclosed |
| US-20160004155-A1 | PHOTO ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-07 | — | — | US | disclosed |
| US-9221742-B2 | Sulfonium salt, chemically amplified resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-29 | — | — | US | disclosed |
| US-20150301449-A1 | PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-22 | — | — | US | disclosed |
| US-9164384-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-20 | — | — | US | disclosed |
| US-20150086926-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-26 | — | — | US | disclosed |
| US-20140322650-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-10-30 | — | — | US | disclosed |
| US-20130130177-A1 | NEGATIVE PATTERN FORMING PROCESS AND NEGATIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-23 | — | — | US | disclosed |
| US-20130065183-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (11 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11333974-B2 | Onium salt, chemically amplified resist composition, and patterning process | ARF5, EIF2B3, KAT5 | CYP2D6 3744/4885SLC6A2 1302/4885SLC6A4 868/4885 |
| US-20160131972-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | LIFR, NHERF1, MIF | CYP2D6 2665/4885SLC6A2 538/4885SLC6A4 219/4885 |
| US-11215926-B2 | Sulfonium compound, resist composition, and patterning process | HNRNPU, PAG1, LSM14A | CYP2D6 2811/4885SLC6A2 4260/4885SLC6A4 3549/4885 |
| US-20150086926-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | CA2, CASR, CECR2 | CYP2D6 3924/4885SLC6A2 3805/4885SLC6A4 3329/4885 |
| US-20180099928-A1 | SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | C1R, LBR, SMARCC2 | CYP2D6 2668/4885SLC6A2 4310/4885SLC6A4 3344/4885 |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | ETV6, PKD1, PKD2 | CYP2D6 3145/4885SLC6A2 4420/4885SLC6A4 3161/4885 |
| US-10025180-B2 | Sulfonium compound, resist composition, and patterning process | SRR, SPIN2B, SPIN4 | CYP2D6 2029/4885SLC6A2 949/4885SLC6A4 308/4885 |
| US-20180059543-A1 | SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS | SRR, SPIN2B, SPIN4 | CYP2D6 2029/4885SLC6A2 949/4885SLC6A4 308/4885 |
| US-20200133122-A1 | NOVEL ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ARF5, ARF4, EIF2B3 | CYP2D6 3905/4885SLC6A2 1611/4885SLC6A4 1278/4885 |
| US-20200159115-A1 | NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, EEF2, EEF1G | CYP2D6 4620/4885SLC6A2 3754/4885SLC6A4 3403/4885 |
| US-20150301449-A1 | PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | PAG1, PARG, PAH | CYP2D6 2367/4885SLC6A2 1058/4885SLC6A4 622/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.