SCHEMBL197141

SCHEMBL197141

O=[N+]([O-])c1cccc(C(F)(F)F)c1COS(=O)(=O)c1ccc(Cl)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 3/20 0.40
ALDH1A1 P00352 3/20 0.40
MAPT P10636 4/20 0.39
CCR2 P41597 3/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
L3MBTL1 Q9Y468 3/20 0.39
MAPK1 P28482 1/20 0.39
ATM Q13315 1/20 0.38
FLT1 P17948 1/20 0.37
FLT4 P35916 1/20 0.37
KDR P35968 1/20 0.37
HSD11B1 P28845 1/20 0.35
IDO1 P14902 1/20 0.35
HTT P42858 1/20 0.35
KIF18A Q8NI77 1/20 0.34
CYP1A2 P05177 1/20 0.34
CYP3A4 P08684 1/20 0.34
CYP2D6 P10635 1/20 0.34
CYP2C9 P11712 1/20 0.34
CYP2C19 P33261 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28038938 0.99 LMNA (0.40) LMNAALDH1A1MAPTCCR2SMN1; SMN2
SCHEMBL29516013 0.89 HSD11B1 (0.41) ALDH1A1ATMHSD11B1
SCHEMBL196874 0.89 HSD11B1 (0.41) ALDH1A1ATMHSD11B1
SCHEMBL14509459 0.89 ATM (0.38) LMNAALDH1A1MAPTL3MBTL1ATM
SCHEMBL7788635 0.88 ALDH1A1 (0.40) LMNAALDH1A1MAPTSMN1; SMN2MAPK1
SCHEMBL8137157 0.88 ATM (0.41) LMNAALDH1A1CCR2MAPK1ATM
SCHEMBL7597216 0.86 KMT2A (0.44) LMNAMAPTSMN1; SMN2MAPK1ATM
SCHEMBL28285046 0.85 KMT2A (0.38) LMNAALDH1A1MAPTSMN1; SMN2L3MBTL1
SCHEMBL14509395 0.82 CA2 (0.41) ALDH1A1ATMCYP1A2CYP3A4CYP2D6
SCHEMBL3253710 0.81 PTGS2 (0.42) LMNAMAPTSMN1; SMN2MAPK1HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 416 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12638775-B2 Methods and compositions for improved patterning of photoresist TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2026-05-26 US disclosed
CN-113412533-B Spin-on composition comprising an inorganic oxide component and an alkynyloxy-substituted spin-on carbon component 默克专利股份有限公司 2026-05-22 CN disclosed
US-20260140448-A1 UNDERLAYER COMPOSITION FOR USE IN MANUFACTURING ELECTRONIC DEVICES DUPONT ELECTRONIC MAT INTERNATIONAL LLC (US) 2026-05-21 US disclosed
EP-3928348-B1 SPIN-ON COMPOSITIONS COMPRISING AN INORGANIC OXIDE COMPONENT AND AN ALKYNYLOXY SUBSTITUTED SPIN-ON CARBON COMPONENT USEFUL AS HARD MASKS AND FILLING MATERIALS WITH IMPROVED SHELF LIFE MERCK PATENT GMBH (DE) 2025-10-29 EP disclosed
US-12441822-B2 Polymer, semiconductor composition comprising polymer, and method for manufacturing film using semiconductor composition MERCK PATENT GMBH (DE) 2025-10-14 US disclosed
US-20250246528-A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-07-31 US disclosed
US-12313971-B2 Coated underlayer for overcoated photoresist DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC (US) 2025-05-27 US disclosed
US-12300593-B2 Semiconductor device and method of manufacture TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-05-13 US disclosed
US-12234369-B2 Photoresist topcoat compositions and methods of processing photoresist compositions DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC (US) 2025-02-25 US disclosed
CN-118955829-A Ethynyl-derived complexes, compositions comprising the same, methods of making coatings therefrom, and methods of making devices comprising the coatings 默克专利有限公司 2024-11-15 CN disclosed
EP-1563343-A1 ANTIREFLECTIVE COMPOSITIONS FOR PHOTORESISTS Clariant International Ltd. (CH) 2005-08-17 EP disclosed
CN-1215381-C Antireflective composition for deep ultraviolet photoresist AZ ELECTRONIC MATERIAL CO LTD (JP) 2005-08-17 CN disclosed
WO-2005052016-A2 BOTTOM ANTIREFLECTIVE COATINGS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2005-06-09 WO disclosed
US-20050112494-A1 Bottom antireflective coatings AZ ELECTRONIC MATERIALS USA CORP. 2005-05-26 US disclosed
WO-2004046828-A1 ANTIREFLECTIVE COMPOSITIONS FOR PHOTORESISTS AZ ELECTRONIC MATERIALS USA CORP. (US) 2004-06-03 WO disclosed
US-20040101779-A1 Antireflective compositions for photoresists MERCK PATENT GMBH (DE) 2004-05-27 US disclosed
CN-1330779-A Antireflective composition for deep ultraviolet photoresist CLARIANT INT LTD (CH) 2002-01-09 CN disclosed
EP-1131678-A2 ANTIREFLECTIVE COMPOSITION FOR A DEEP ULTRAVIOLET PHOTORESIST CLARIANT INTERNATIONAL LTD. (CH) 2001-09-12 EP disclosed
US-6114085-A Antireflective composition for a deep ultraviolet photoresist CLARIANT FINANCE (BVI) LIMITED (VG) 2000-09-05 US disclosed
WO-2000029906-A2 ANTIREFLECTIVE COMPOSITION FOR A DEEP ULTRAVIOLET PHOTORESIST CLARIANT INTERNATIONAL LTD. (CH) 2000-05-25 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12638775-B2 Methods and compositions for improved patterning of photoresist DSG1, SCO2, ERCC1 LMNA 606/4885ALDH1A1 1401/4885MAPT 1537/4885
US-20260140448-A1 UNDERLAYER COMPOSITION FOR USE IN MANUFACTURING ELECTRONIC DEVICES ARCN1, ASH2L, ITGB4 LMNA 1543/4885ALDH1A1 2211/4885MAPT 3460/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.