SCHEMBL2233764

SCHEMBL2233764

Cc1ccc(-[s+]2c3ccccc3c3ccccc32)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ACHE P22303 3/20 0.38
LMNA P02545 2/20 0.38
TSHR P16473 1/20 0.38
ALOX12 P18054 1/20 0.38
TDP1 Q9NUW8 1/20 0.36
CYP1A2 P05177 2/20 0.35
HPGD P15428 1/20 0.33
BCHE P06276 1/20 0.33
HTT P42858 2/20 0.32
MEN1 O00255 2/20 0.32
KMT2A Q03164 2/20 0.32
MAPT P10636 1/20 0.32
KDM1A O60341 1/20 0.32
KEAP1 Q14145 1/20 0.32
NFE2L2 Q16236 1/20 0.32
KIF11 P52732 1/20 0.32
NPC1 O15118 1/20 0.32
XBP1 P17861 1/20 0.32
RAB9A P51151 1/20 0.32
ATM Q13315 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29968036 1.00 ACHE (0.38) ACHELMNATSHRALOX12TDP1
Iodide SCHEMBL3776654 0.98 ACHE (0.36) ACHELMNATSHRALOX12TDP1
SCHEMBL13326151 0.88 P2RX4 (0.38) ACHELMNATSHRALOX12TDP1
SCHEMBL13326072 0.88 P2RX4 (0.41) ACHELMNATSHRALOX12TDP1
Acetic Acid SCHEMBL3771068 0.87 LMNA (0.37) LMNATSHRCYP1A2HTTMEN1
SCHEMBL8737948 0.82 LMNA (0.37) ACHELMNATDP1CYP1A2HPGD
Trifluoromethanesulfonic Acid SCHEMBL31720765 0.82 GPR3 (0.43) HTTMEN1KMT2AKEAP1NFE2L2
SCHEMBL10311824 0.77 TSHR (0.38) ACHELMNATSHRCYP1A2BCHE
SCHEMBL107598 0.77 CA12 (0.38) LMNATDP1HPGDHTTMEN1
SCHEMBL8736303 0.77 CA4 (0.44) ACHELMNACYP1A2HPGDHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 154 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9221928-B2 Fluorine-containing sulfonate resin, fluorine-containing N-sulfonyloxyimide resin, resist composition and pattern formation method CENTRAL GLASS COMPANY, LIMITED (JP) 2015-12-29 US claimed
EP-2692762-B1 ELECTRICALLY CONDUCTIVE COMPOSITION, ELECTRICALLY CONDUCTIVE FILM USING SAID COMPOSITION AND PRODUCTION METHOD THEREFOR FUJIFILM CORP (JP) 2017-09-27 EP disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
EP-2090932-B1 Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORP (JP) 2017-05-31 EP disclosed
US-9651863-B2 Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-05-16 US disclosed
US-9651863-B2 Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-05-16 US disclosed
US-20170121437-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK FUJIFILM CORPORATION (JP) 2017-05-04 US disclosed
US-20170121437-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK FUJIFILM CORPORATION (JP) 2017-05-04 US disclosed
US-9632410-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, resist-coated mask blank, photomask and pattern forming method, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2017-04-25 US disclosed
US-7615330-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2009-11-10 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed
US-20090202946-A1 POSITIVE RESIST COMPOSITION FOR USE WITH ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-08-13 US disclosed
US-20090042124-A1 RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND FUJIFILM CORPORATION (JP) 2009-02-12 US disclosed
US-7374860-B2 Positive resist composition and pattern forming method using the same FUJI FILM CORPORATION (JP) 2008-05-20 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081288-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20070224540-A1 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-09-27 US disclosed
US-20070207390-A1 Hologram recording material and hologram recording method FUJIFILM CORPORATION (JP) 2007-09-06 US disclosed
US-20070197677-A1 Sulfonium salt, curable composition, ink composition, inkjet recording method, printed material, process for producing lithographic printing plate, and lithographic printing plate FUJIFILM CORPORATION (JP) 2007-08-23 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080081288-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION PPOX, TYR, ERCC4 ACHE 3860/4885LMNA 3982/4885TSHR 4471/4885
US-20090042124-A1 RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND ADH5, SRRM2, ADH1A ACHE 4822/4885LMNA 3834/4885TSHR 2329/4885
US-20070197677-A1 Sulfonium salt, curable composition, ink composition, inkjet recording method, printed material, process for producing lithographic printing plate, and lithographic printing plate SPIN2B, KAT2B, TIPRL ACHE 3847/4885LMNA 3639/4885TSHR 3394/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.