Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 7/20 | 0.38 |
| ▸ | CYP17A1 | P05093 | 2/20 | 0.38 |
| ▸ | CYP19A1 | P11511 | 2/20 | 0.38 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.38 |
| ▸ | NPSR1 | Q6W5P4 | 3/20 | 0.38 |
| ▸ | MEN1 | O00255 | 3/20 | 0.38 |
| ▸ | MAPT | P10636 | 2/20 | 0.38 |
| ▸ | PRKCA | P17252 | 1/20 | 0.37 |
| ▸ | TSHR | P16473 | 1/20 | 0.36 |
| ▸ | ATM | Q13315 | 1/20 | 0.35 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.35 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.35 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.35 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.35 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.35 |
| ▸ | GAA | P10253 | 1/20 | 0.35 |
| ▸ | RECQL | P46063 | 1/20 | 0.33 |
| ▸ | POLB | P06746 | 1/20 | 0.33 |
| ▸ | PKM | P14618 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10172814 | 0.92 | ALDH1A1 (0.37) | ALDH1A1CYP17A1CYP19A1EPHX2KMT2A | |
| SCHEMBL10067091 | 0.91 | ALDH1A1 (0.36) | ALDH1A1CYP17A1CYP19A1EPHX2KMT2A | |
| SCHEMBL98471 | 0.87 | ALDH1A1 (0.47) | ALDH1A1CYP17A1CYP19A1KMT2ANPSR1 | |
| SCHEMBL12972109 | 0.82 | PRKCA (0.43) | ALDH1A1CYP17A1CYP19A1EPHX2KMT2A | |
| SCHEMBL25776323 | 0.81 | NPSR1 (0.41) | ALDH1A1CYP17A1CYP19A1EPHX2KMT2A | |
| SCHEMBL12977648 | 0.81 | ALDH1A1 (0.37) | ALDH1A1CYP17A1CYP19A1EPHX2KMT2A | |
| SCHEMBL23425539 | 0.80 | PRKCA (0.41) | ALDH1A1CYP17A1CYP19A1KMT2ANPSR1 | |
| SCHEMBL17717877 | 0.80 | ALDH1A1 (0.40) | ALDH1A1CYP17A1CYP19A1EPHX2KMT2A | |
| SCHEMBL14240733 | 0.80 | ALDH1A1 (0.37) | ALDH1A1CYP17A1CYP19A1EPHX2KMT2A | |
| SCHEMBL10067090 | 0.79 | ALDH1A1 (0.38) | ALDH1A1CYP17A1CYP19A1KMT2ANPSR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 127 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230305398-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230305398-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230244142-A1 | POLYMER, RESIST COMPOSITION, AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230244142-A1 | POLYMER, RESIST COMPOSITION, AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-20140080055-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-20 | — | — | US | disclosed |
| US-20140017617-A1 | METHOD OF PRODUCING AMMONIUM SALT COMPOUND, METHOD OF PRODUCING COMPOUND, AND COMPOUND, POLYMERIC COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-01-16 | — | — | US | disclosed |
| US-8394570-B2 | Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-12 | — | — | US | disclosed |
| US-8394570-B2 | Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-12 | — | — | US | disclosed |
| US-20120196228-A1 | RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-02 | — | — | US | disclosed |
| US-20120164582-A1 | RADIATION-SENSITIVE COMPOSITION AND COMPOUND | JSR CORPORATION (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120164577-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120141938-A1 | BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-07 | — | — | US | disclosed |
| US-20120100486-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-04-26 | — | — | US | disclosed |
| US-20100143830-A1 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SLC6A9, SLC6A5, REN | ALDH1A1 3949/4885CYP17A1 1116/4885CYP19A1 4422/4885 |
| US-20120100486-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | STS, SLC6A5, SLC6A9 | ALDH1A1 3978/4885CYP17A1 1866/4885CYP19A1 4133/4885 |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | ETV6, PKD1, PKD2 | ALDH1A1 3150/4885CYP17A1 2847/4885CYP19A1 2372/4885 |
| US-20100143830-A1 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS | TYK2, VRK2, ARSA | ALDH1A1 3818/4885CYP17A1 2318/4885CYP19A1 1417/4885 |
| US-20120164582-A1 | RADIATION-SENSITIVE COMPOSITION AND COMPOUND | RAD51, RER1, ATP6AP1 | ALDH1A1 1300/4885CYP17A1 2869/4885CYP19A1 189/4885 |
| US-20120141938-A1 | BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | GABRA5, GABRB1, GABBR1 | ALDH1A1 789/4885CYP17A1 1906/4885CYP19A1 1933/4885 |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | NAF1, RALA, RSU1 | ALDH1A1 1459/4885CYP17A1 2961/4885CYP19A1 4042/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.