SCHEMBL2740709

SCHEMBL2740709

CCC(C)(C)C(=O)OCCOC(=O)C(F)(F)S(=O)(=O)O

nearest known ligand 0.36

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
CYP4F2 P78329 1/20 0.31
CYP4A11 Q02928 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2740705 0.93 ALDH1A1 (0.34) ALDH1A1L3MBTL1CYP4F2CYP4A11
SCHEMBL17920892 0.93 ALDH1A1 (0.34) ALDH1A1L3MBTL1CYP4F2CYP4A11
SCHEMBL12157344 0.92 CYP4F2 (0.35) ALDH1A1L3MBTL1CYP4F2CYP4A11
SCHEMBL12409950 0.90 ALDH1A1 (0.36) ALDH1A1L3MBTL1CYP4F2CYP4A11
SCHEMBL14228089 0.85 ALDH1A1 (0.48) ALDH1A1L3MBTL1
SCHEMBL26488837 0.84 ALDH1A1 (0.40) ALDH1A1L3MBTL1
SCHEMBL13131180 0.83
SCHEMBL2610390 0.82 ALDH1A1 (0.41) ALDH1A1L3MBTL1
SCHEMBL13131210 0.82 EPHX1 (0.34) ALDH1A1L3MBTL1
SCHEMBL9963740 0.82 CA1 (0.41) ALDH1A1L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 112 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240219830-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-07-04 US disclosed
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-06-27 US disclosed
US-11840503-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-12-12 US disclosed
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-30 US disclosed
US-11820735-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11820736-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11822241-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11822244-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11815813-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-14 US disclosed
US-11782342-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-10-10 US disclosed
US-20120003590-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed
US-20110318693-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-12-29 US disclosed
US-8048610-B2 Sulfonium salt-containing polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-11-01 US disclosed
US-20110183263-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-28 US disclosed
US-20110165519-A1 RESIN SUITABLE FOR AN ACID GENERATOR AND A CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION CONTAINING THE SAME ANDO NOBUO 2011-07-07 US disclosed
US-20100304302-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-02 US disclosed
US-20100248143-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed
US-20100248149-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed
US-20100183975-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND RESIN FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed
US-20090269696-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-29 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11820735-B2 Salt, acid generator, resist composition and method for producing resist pattern RER1, LPAR1, TLR7 ALDH1A1 2671/4885L3MBTL1 751/4885CYP4F2 1598/4885
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS INSR, INSRR, SLC6A5 ALDH1A1 4867/4885L3MBTL1 2940/4885CYP4F2 4850/4885
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SCO2, CBR1, OXGR1 ALDH1A1 492/4885L3MBTL1 1690/4885CYP4F2 890/4885
US-11782342-B2 Salt and photoresist composition containing the same CRY1, REN, SLC6A19 ALDH1A1 2615/4885L3MBTL1 4855/4885CYP4F2 2328/4885
US-11822244-B2 Compound, resin, resist composition and method for producing resist pattern RER1, AFF1, AFF4 ALDH1A1 2890/4885L3MBTL1 1244/4885CYP4F2 1438/4885
US-20240219830-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN H1-0, HCN3, RER1 ALDH1A1 1499/4885L3MBTL1 2773/4885CYP4F2 767/4885
US-11820736-B2 Salt, acid generator, resist composition and method for producing resist pattern H1-10, H1-0, H1-2 ALDH1A1 608/4885L3MBTL1 1600/4885CYP4F2 2956/4885
US-11822241-B2 Salt, acid generator, resist composition and method for producing resist pattern H1-10, H1-0, CHRM1 ALDH1A1 921/4885L3MBTL1 1002/4885CYP4F2 2140/4885
US-11840503-B2 Salt, acid generator, resist composition and method for producing resist pattern RER1, H1-0, CA7 ALDH1A1 2235/4885L3MBTL1 3554/4885CYP4F2 1143/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.