Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GPR3 | P46089 | 2/20 | 0.38 |
| ▸ | KCNH2 | Q12809 | 2/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.36 |
| ▸ | CA1 | P00915 | 2/20 | 0.35 |
| ▸ | CA2 | P00918 | 2/20 | 0.35 |
| ▸ | CA5A | P35218 | 2/20 | 0.35 |
| ▸ | CA9 | Q16790 | 2/20 | 0.35 |
| ▸ | GAA | P10253 | 1/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.34 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.34 |
| ▸ | ACHE | P22303 | 1/20 | 0.34 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.34 |
| ▸ | TSHR | P16473 | 1/20 | 0.34 |
| ▸ | PKM | P14618 | 2/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | POLB | P06746 | 1/20 | 0.33 |
| ▸ | HTT | P42858 | 1/20 | 0.33 |
| ▸ | CA12 | O43570 | 1/20 | 0.32 |
| ▸ | CA3 | P07451 | 1/20 | 0.32 |
| ▸ | CA6 | P23280 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL36289 | 0.98 | GPR3 (0.39) | GPR3KCNH2ALDH1A1CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL3627234 | 0.87 | ALDH1A1 (0.34) | GPR3KCNH2ALDH1A1CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL3627233 | 0.84 | ALDH1A1 (0.32) | GPR3KCNH2ALDH1A1 | |
| Trifluoromethanesulfonic Acid SCHEMBL36792 | 0.84 | KCNH2 (0.37) | GPR3KCNH2CA1CA2CA9 | |
| SCHEMBL5439039 | 0.84 | ALDH1A1 (0.35) | ALDH1A1CA1CA2CA5ACA9 | |
| Trifluoromethanesulfonic Acid SCHEMBL36325 | 0.83 | GPR3 (0.42) | GPR3KCNH2CA1CA2CA5A | |
| Trifluoromethanesulfonic Acid SCHEMBL7058003 | 0.83 | KCNH2 (0.41) | KCNH2ALDH1A1CA1CA2GAA | |
| SCHEMBL5433859 | 0.83 | ALDH1A1 (0.35) | ALDH1A1CA1CA2CA5ACA9 | |
| Trifluoromethanesulfonic Acid SCHEMBL7053442 | 0.83 | ACHE (0.40) | ALDH1A1GAAKMT2ASMN1; SMN2ACHE | |
| Trifluoromethanesulfonic Acid SCHEMBL2900165 | 0.82 | KCNH2 (0.38) | GPR3KCNH2CA1CA2CA9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 280 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2584409-B1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND | TOKYO OHKA KOGYO CO LTD (JP) | 2021-04-28 | — | — | EP | disclosed |
| EP-2060600-B1 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO LTD (JP) | 2017-12-27 | — | — | EP | disclosed |
| EP-2093213-B1 | Positive resist composition and method of forming a resist pattern using the same | TOKYO OHKA KOGYO CO LTD (JP) | 2017-10-04 | — | — | EP | disclosed |
| US-9618842-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9618843-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9494860-B2 | Resist composition, method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-11-15 | — | — | US | disclosed |
| EP-2088466-B1 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO LTD (JP) | 2016-10-26 | — | — | EP | disclosed |
| EP-2073060-B1 | Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO LTD (JP) | 2016-08-24 | — | — | EP | disclosed |
| US-9250531-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-02-02 | — | — | US | disclosed |
| US-9244349-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-01-26 | — | — | US | disclosed |
| US-7491485-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-17 | — | — | US | disclosed |
| US-20090042131-A1 | acrylate ester homo- or co-polymer increased solubility in an alkali developing solution under action of acid and an acid-generator, having an acid dissociable, dissolution inhibiting group | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-12 | — | — | US | disclosed |
| US-7488568-B2 | Resist composition, method of forming resist pattern, compound and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-10 | — | — | US | disclosed |
| US-20090023097-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20090023095-A1 | NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080311515-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080292988-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2008-11-27 | — | — | US | disclosed |
| US-20080268376-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-09 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | GNG2, ACAD9, SCO2 | GPR3 1535/4885KCNH2 988/4885ALDH1A1 1184/4885 |
| US-20090042131-A1 | acrylate ester homo- or co-polymer increased solubility in an alkali developing solution under action of acid and an acid-generator, having an acid dissociable, dissolution inhibiting group | ADH1A, F12, DDAH1 | GPR3 2198/4885KCNH2 2874/4885ALDH1A1 17/4885 |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | RER1, ACAD9, RRS1 | GPR3 1936/4885KCNH2 1069/4885ALDH1A1 796/4885 |
| US-20090023095-A1 | NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN | C1R, CYP1B1, C1S | GPR3 3225/4885KCNH2 1013/4885ALDH1A1 94/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.