Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL36792

O=S(=O)([O-])C(F)(F)F.Oc1ccc([S+]2CCCCC2)cc1

nearest known ligand 0.37

Full drug profile on Sugi Atlas →

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 1/20 0.37
GPR3 P46089 1/20 0.33
LMNA P02545 1/20 0.33
CA12 O43570 1/20 0.32
CA1 P00915 1/20 0.32
CA2 P00918 1/20 0.32
CA9 Q16790 1/20 0.32
ENPP2 Q13822 1/20 0.32
ESR1 P03372 3/20 0.31
ESR2 Q92731 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL2900165 0.98 KCNH2 (0.38) KCNH2GPR3LMNACA12CA1
Trifluoromethanesulfonic Acid SCHEMBL36223 0.84 GPR3 (0.38) KCNH2GPR3CA12CA1CA2
SCHEMBL2898445 0.84 CA1 (0.33) CA1CA2
Trifluoromethanesulfonic Acid SCHEMBL36325 0.83 GPR3 (0.42) KCNH2GPR3LMNACA1CA2
SCHEMBL2901096 0.83 CA2 (0.35) CA1CA2
Trifluoromethanesulfonic Acid SCHEMBL36289 0.82 GPR3 (0.39) KCNH2GPR3CA12CA1CA2
Trifluoromethanesulfonic Acid SCHEMBL36383 0.81 GPR3 (0.43) KCNH2GPR3LMNACA1CA2
SCHEMBL2903728 0.81 KIF11 (0.41) CA12CA1CA2CA9ESR2
SCHEMBL133003 0.80 ALDH1A1 (0.40) LMNACA12CA1CA2CA9
Trifluoromethanesulfonic Acid SCHEMBL7058003 0.80 KCNH2 (0.41) KCNH2CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 279 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2584409-B1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND TOKYO OHKA KOGYO CO LTD (JP) 2021-04-28 EP disclosed
EP-2060600-B1 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO LTD (JP) 2017-12-27 EP disclosed
EP-2093213-B1 Positive resist composition and method of forming a resist pattern using the same TOKYO OHKA KOGYO CO LTD (JP) 2017-10-04 EP disclosed
US-9618842-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9618843-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-9494860-B2 Resist composition, method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-11-15 US disclosed
EP-2088466-B1 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO LTD (JP) 2016-10-26 EP disclosed
EP-2073060-B1 Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2016-08-24 EP disclosed
US-9250531-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2016-02-02 US disclosed
US-9244349-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-01-26 US disclosed
US-7491485-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-17 US disclosed
US-20090042131-A1 acrylate ester homo- or co-polymer increased solubility in an alkali developing solution under action of acid and an acid-generator, having an acid dissociable, dissolution inhibiting group TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-12 US disclosed
US-7488568-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-10 US disclosed
US-20090023097-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed
US-20090023095-A1 NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080311515-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080292988-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2008-11-27 US disclosed
US-20080268376-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-30 US disclosed
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation GNG2, ACAD9, SCO2 KCNH2 988/4885GPR3 1535/4885LMNA 960/4885
US-20090042131-A1 acrylate ester homo- or co-polymer increased solubility in an alkali developing solution under action of acid and an acid-generator, having an acid dissociable, dissolution inhibiting group ADH1A, F12, DDAH1 KCNH2 2874/4885GPR3 2198/4885LMNA 2964/4885
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR RER1, ACAD9, RRS1 KCNH2 1069/4885GPR3 1936/4885LMNA 1293/4885
US-20090023095-A1 NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN C1R, CYP1B1, C1S KCNH2 1013/4885GPR3 3225/4885LMNA 2948/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.