SCHEMBL365664

SCHEMBL365664

C=C(C)C(=O)OC(C)(C)C1C2CC3CC(C2)CC1C3

nearest known ligand 0.38

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
EPHX2 P34913 1/20 0.38
ALDH1A1 P00352 2/20 0.33
HSD11B1 P28845 1/20 0.31
EPHX1 P07099 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15910889 0.82 EPHX2 (0.42) EPHX2HSD11B1EPHX1
SCHEMBL14984183 0.81 ALDH1A1 (0.32) EPHX2ALDH1A1HSD11B1EPHX1
SCHEMBL28425067 0.79 HSD11B1 (0.38) HSD11B1
SCHEMBL6840624 0.78 EPHX2 (0.46) EPHX2HSD11B1EPHX1
SCHEMBL6448880 0.76 EPHX2 (0.38) EPHX2HSD11B1EPHX1
SCHEMBL1819178 0.76 SLC6A3 (0.31) EPHX2ALDH1A1
SCHEMBL25802902 0.76 SLC6A3 (0.31) EPHX2ALDH1A1
SCHEMBL10020760 0.74 ALDH1A1 (0.38) EPHX2ALDH1A1HSD11B1EPHX1
SCHEMBL17752184 0.74 HSD11B1 (0.36) EPHX2HSD11B1EPHX1
SCHEMBL15470614 0.74 EPHX2 (0.39) EPHX2HSD11B1EPHX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 88 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3537217-B1 POSITIVE RESIST COMPOSITION, RESIN USED FOR THE POSITIVE RESIST COMPOSITION, COMPOUND USED FOR SYNTHESIS OF THE RESIN AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION FUJIFILM CORP (JP) 2022-08-31 EP disclosed
EP-3537217-A2 POSITIVE RESIST COMPOSITION, RESIN USED FOR THE POSITIVE RESIST COMPOSITION, COMPOUND USED FOR SYNTHESIS OF THE RESIN AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION FUJIFILM Corporation (JP) 2019-09-11 EP disclosed
EP-1795960-B1 Positive resist composition, pattern forming method using the positive resist composition, use of the positive resit composition FUJIFILM CORP (JP) 2019-06-05 EP disclosed
EP-2329320-B1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD FUJIFILM CORP (JP) 2019-05-01 EP disclosed
US-10007184-B2 Silicon-containing underlayers ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2018-06-26 US disclosed
US-10007184-B2 Silicon-containing underlayers ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2018-06-26 US disclosed
US-20180088073-A1 GAS SENSOR AND METHOD OF MANUFACTURE THEREOF ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2018-03-29 US disclosed
US-20180088073-A1 GAS SENSOR AND METHOD OF MANUFACTURE THEREOF ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2018-03-29 US disclosed
US-20180059546-A1 SILICON-CONTAINING UNDERLAYERS ROHM AND HAAS ELECTRONIC MATERIALS LLC 2018-03-01 US disclosed
US-20180059546-A1 SILICON-CONTAINING UNDERLAYERS ROHM AND HAAS ELECTRONIC MATERIALS LLC 2018-03-01 US disclosed
EP-1903394-A1 Resist composition, resin for use in the resist composition, and pattern-forming method using the resist composition FUJIFILM Corporation (JP) 2008-03-26 EP disclosed
US-20070224539-A1 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-09-27 US disclosed
EP-1837704-A2 Resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-09-26 EP disclosed
US-20070178405-A1 Positive resist composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-08-02 US disclosed
US-20070134588-A1 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2007-06-14 US disclosed
EP-1795960-A2 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition Fujifilm Corporation (JP) 2007-06-13 EP disclosed
EP-1754999-A2 Positive resist composition and method of pattern formation with the same Fuji Photo Film Co., Ltd. (JP) 2007-02-21 EP disclosed
US-6872846-B2 Process for preparation of tertiary alcohol esters DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2005-03-29 US disclosed
US-20040015006-A1 Efficient one pot process DAICEL CHEMICAL INDUSTRIAL, LTD. (JP) 2004-01-22 US disclosed
EP-1344762-A1 PROCESS FOR PREPARATION OF TERTIARY ALCOHOL ESTERS Daicel Chemical Industries, Ltd. (JP) 2003-09-17 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20040015006-A1 Efficient one pot process ADH1A, ADH1C, ADH5 EPHX2 681/4885ALDH1A1 25/4885HSD11B1 75/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.