SCHEMBL3790171

SCHEMBL3790171

O=C(OC(CS(=O)(=O)[O-])(C(F)(F)F)C(F)(F)F)C12CC3CC(CC(C3)C1)C2.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.40
CYP17A1 P05093 3/20 0.39
CYP19A1 P11511 3/20 0.39
RECQL P46063 1/20 0.38
ALDH1A1 P00352 5/20 0.37
GAA P10253 2/20 0.37
SMN1; SMN2 Q16637 2/20 0.37
HPGD P15428 1/20 0.37
MAPT P10636 1/20 0.36
XBP1 P17861 1/20 0.36
HSD11B1 P28845 2/20 0.36
KMT2A Q03164 1/20 0.35
GABBR2 O75899 1/20 0.34
GABRB1 P18505 1/20 0.34
GABRB2 P47870 1/20 0.34
GABBR1 Q9UBS5 1/20 0.34
USP2 O75604 1/20 0.34
LMNA P02545 1/20 0.34
TP53 P04637 1/20 0.34
POLB P06746 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3794372 0.85 MEN1 (0.39) ALDH1A1KMT2ALMNA
Adamantane SCHEMBL3794380 0.84 MEN1 (0.31) ALDH1A1HPGDKMT2A
SCHEMBL544306 0.78 ALDH1A1 (0.43) KDM4ECYP17A1CYP19A1RECQLALDH1A1
SCHEMBL3790174 0.77 ALDH1A1 (0.42) KDM4ECYP17A1CYP19A1RECQLALDH1A1
SCHEMBL3454497 0.77 ALDH1A1 (0.45) KDM4ECYP17A1CYP19A1RECQLALDH1A1
SCHEMBL3786558 0.76 KMT2A (0.35) ALDH1A1GAASMN1; SMN2HPGDMAPT
SCHEMBL955213 0.75 ALDH1A1 (0.36) KDM4ECYP17A1CYP19A1RECQLALDH1A1
SCHEMBL11991287 0.75 CYP17A1 (0.38) CYP17A1CYP19A1RECQLALDH1A1GAA
SCHEMBL2887913 0.75 ALDH1A1 (0.40) KDM4ECYP17A1CYP19A1RECQLALDH1A1
SCHEMBL31206130 0.75 ALDH1A1 (0.40) KDM4ECYP17A1CYP19A1RECQLALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110885282-B Iodonium salt, resist composition and pattern forming method 信越化学工业株式会社 2023-04-18 CN disclosed
US-10054853-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-08-21 US disclosed
US-9989847-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-05 US disclosed
US-9897916-B2 Compound, polymer compound, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-20 US disclosed
US-20170299963-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-19 US disclosed
US-9703193-B2 Onium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-11 US disclosed
US-9665002-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-30 US disclosed
US-20170038683-A1 COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-09 US disclosed
US-20160320698-A1 ONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-03 US disclosed
US-20160259242-A1 NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-09-08 US disclosed
US-9366958-B2 Photoacid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-14 US disclosed
US-20160131972-A1 NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-12 US disclosed
US-9221742-B2 Sulfonium salt, chemically amplified resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-29 US disclosed
US-20150301449-A1 PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-22 US disclosed
US-9164384-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-20 US disclosed
US-9122155-B2 Sulfonium salt, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-01 US disclosed
US-8956803-B2 Sulfonium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-17 US disclosed
US-20140322650-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-30 US disclosed
US-8283104-B2 Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-09 US disclosed
US-20100209827-A1 NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170038683-A1 COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS WDR1, WDR26, LBR KDM4E 1702/4885CYP17A1 3191/4885CYP19A1 4260/4885
US-20160259242-A1 NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS LIFR, NHERF1, INSR KDM4E 2501/4885CYP17A1 3270/4885CYP19A1 4437/4885
US-10054853-B2 Monomer, polymer, resist composition, and patterning process ASIC1, PKD1, ARCN1 KDM4E 4115/4885CYP17A1 2624/4885CYP19A1 4183/4885
US-20160131972-A1 NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS LIFR, NHERF1, MIF KDM4E 964/4885CYP17A1 3315/4885CYP19A1 4350/4885
US-20170299963-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ASIC1, PKD1, ARCN1 KDM4E 4115/4885CYP17A1 2624/4885CYP19A1 4183/4885
US-20160320698-A1 ONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SLC6A5, EIF2B5, EIF2B4 KDM4E 3504/4885CYP17A1 2321/4885CYP19A1 2699/4885
US-20100209827-A1 NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME DAP3, MRPS23, ASIC3 KDM4E 3897/4885CYP17A1 4131/4885CYP19A1 4043/4885
US-20150301449-A1 PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS PAG1, PARG, PAH KDM4E 3483/4885CYP17A1 4454/4885CYP19A1 3446/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.