SCHEMBL384824

SCHEMBL384824

CC12CCC(C(S(=O)(=O)[O-])C1=O)C2(C)C.Cc1ccc([S+](c2ccc(C)cc2)c2ccc(C)cc2)cc1

nearest known ligand 0.34

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
NR1I2 O75469 1/20 0.34
HTT P42858 2/20 0.34
SMN1; SMN2 Q16637 2/20 0.32
ALDH1A1 P00352 1/20 0.32
HSD17B10 Q99714 1/20 0.32
HSD11B1 P28845 1/20 0.32
ACHE P22303 1/20 0.31
KMT2A Q03164 1/20 0.31
CYP19A1 P11511 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4480664 0.95 NR1I2 (0.32) NR1I2HTT
SCHEMBL217323 0.89 ALDH1A1 (0.32) SMN1; SMN2ALDH1A1HSD17B10HSD11B1
SCHEMBL220080 0.87 HSD11B1 (0.36) SMN1; SMN2ALDH1A1HSD17B10HSD11B1ACHE
SCHEMBL219862 0.87 HSD11B1 (0.36) SMN1; SMN2ALDH1A1HSD17B10HSD11B1ACHE
SCHEMBL447468 0.85 PTGS2 (0.33)
SCHEMBL6339986 0.84 CNR2 (0.31)
SCHEMBL384343 0.83 ALDH1A1 (0.34) ALDH1A1HSD11B1ACHEKMT2A
SCHEMBL6342389 0.82 ALDH1A1 (0.34) SMN1; SMN2ALDH1A1HSD17B10KMT2A
SCHEMBL20162191 0.82 ALDH1A1 (0.36) SMN1; SMN2ALDH1A1HSD17B10KMT2A
Potassium Ion SCHEMBL1305480 0.82 ALDH1A1 (0.36) SMN1; SMN2ALDH1A1HSD17B10KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 201 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
US-11561472-B2 Radiation sensitive composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-01-24 US disclosed
EP-3309614-B1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL CORP (JP) 2021-11-10 EP disclosed
US-20190185707-A1 ACETAL-PROTECTED SILANOL GROUP-CONTAINING POLYSILOXANE COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2019-06-20 US disclosed
US-20180181000-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-06-28 US disclosed
EP-3309614-A1 RADIATION SENSITIVE COMPOSITION Nissan Chemical Industries, Ltd. (JP) 2018-04-18 EP disclosed
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2000851-B1 Photomask blank, resist pattern forming process, and photomask preparation process SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
US-20040229162-A1 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-11-18 US disclosed
US-20040167322-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-08-26 US disclosed
US-20040166432-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-08-26 US disclosed
US-6713612-B2 Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-03-30 US disclosed
US-20040033432-A1 Novel sulfonydiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-02-19 US disclosed
US-20040033440-A1 Photoacid generators, chemically amplified positive resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-02-19 US disclosed
US-6689530-B2 ULTRAVIOLET LITHOGRAPHY MICROFABRICATION WITH IMPROVED RESOLUTION AND PATTERN PROFILE AFTER DEVELOPMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-02-10 US disclosed
US-20030224298-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-04 US disclosed
US-20030215738-A1 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-11-20 US disclosed
US-20030180653-A1 Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-09-25 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20040033432-A1 Novel sulfonydiazomethanes, photoacid generators, resist compositions, and patterning process POLL, PIM3, VEGFA NR1I2 4349/4885HTT 2123/4885SMN1; SMN2 1352/4885
US-20030224298-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process VEGFA, DNMT3A, PIM3 NR1I2 4360/4885HTT 2715/4885SMN1; SMN2 2273/4885
US-11561472-B2 Radiation sensitive composition RER1, RAD1, RAD51 NR1I2 1357/4885HTT 4393/4885SMN1; SMN2 3302/4885
US-20030215738-A1 Photoacid generators, chemically amplified resist compositions, and patterning process CCNH, PAH, POLH NR1I2 3478/4885HTT 3448/4885SMN1; SMN2 1941/4885
US-20030180653-A1 Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process CACNA1A, KCNA1, POLL NR1I2 1630/4885HTT 2413/4885SMN1; SMN2 3314/4885
US-20040167322-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process POLL, VEGFA, PIM3 NR1I2 4388/4885HTT 2322/4885SMN1; SMN2 1557/4885
US-20180181000-A1 RADIATION SENSITIVE COMPOSITION RER1, RAD1, RAD51 NR1I2 1136/4885HTT 4198/4885SMN1; SMN2 3071/4885
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION XRCC6, RAD50, XRCC5 NR1I2 140/4885HTT 4847/4885SMN1; SMN2 2713/4885
US-20040166432-A1 Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process VEGFA, POLL, PIM3 NR1I2 4389/4885HTT 2186/4885SMN1; SMN2 1403/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.