Water

Water

SCHEMBL4022360

C=CC12CC3CC(CC(C3)C1)C2.O

nearest known ligand 0.37

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO

The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GRIN2A known ✓ Q12879 4/20 0.36
SIGMAR1 known ✓ Q99720 1/20 0.36
THRB known ✓ P10828 2/20 0.35
NPFFR1 Q9GZQ6 1/20 0.37
NPFFR2 Q9Y5X5 1/20 0.37
GRIN2D O15399 4/20 0.36
GRIN3B O60391 4/20 0.36
GRIN1 Q05586 4/20 0.36
GRIN2B Q13224 4/20 0.36
GRIN2C Q14957 4/20 0.36
GRIN3A Q8TCU5 4/20 0.36
LMNA P02545 2/20 0.36
SLC22A2 O15244 1/20 0.36
SLC22A1 O15245 1/20 0.36
TSHR P16473 1/20 0.36
NFKB1 P19838 1/20 0.36
STAT6 P42226 1/20 0.36
SLC47A1 Q96FL8 1/20 0.36
POLB P06746 1/20 0.35
BLM P54132 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL960382 0.97 GRIN2D (0.38) NPFFR1NPFFR2GRIN2DGRIN3BGRIN1
Bicarbonate SCHEMBL20943642 0.85 THRB (0.43) NPFFR1NPFFR2TSHRTHRBCYP2C9
SCHEMBL5495240 0.80 MEN1 (0.32) NPFFR1NPFFR2GRIN2DGRIN3BGRIN1
SCHEMBL6395459 0.78 SIGMAR1 (0.32) SIGMAR1
SCHEMBL4437737 0.76 NPFFR1 (0.31) NPFFR1NPFFR2GRIN2DGRIN3BGRIN1
SCHEMBL8160229 0.76
SCHEMBL3415057 0.74 NPFFR1 (0.35) NPFFR1NPFFR2GRIN2DGRIN3BGRIN1
SCHEMBL6348665 0.74 EPHX2 (0.43) TSHR
SCHEMBL3848004 0.74 LMNA (0.32) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL4102744 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7588876-B2 Resist material and pattern formation method PANASONIC CORPORATION (JP) 2009-09-15 US disclosed
US-7413843-B2 Sulfonamide compound, polymer compound, resist material and pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2008-08-19 US disclosed
US-7378216-B2 Resist material and pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2008-05-27 US disclosed
US-20070099117-A1 Sulfonamide compound, polymer compound, resist material and pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-05-03 US disclosed
US-7166418-B2 Selectively irradiating resist film with high energy beams of light such as krypton fluoride, argon fluoride, fluorine, krypton, argon or soft X-ray laser ; developing polymer with unsaturated sulfonamide units MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-01-23 US disclosed
EP-1602976-B1 Resist material and pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2007-01-17 EP disclosed
US-20050277057-A1 Resist material and pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-12-15 US disclosed
EP-1602976-A1 Resist material and pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-12-07 EP disclosed
US-20050266338-A1 Resist material and pattern formation method PANASONIC CORPORATION (JP) 2005-12-01 US disclosed
US-20050266337-A1 Resist material and pattern formation method PANNOVA SEMIC, LLC 2005-12-01 US disclosed
EP-1517181-A1 Sulfonamide compound, polymer compound, reist material and pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-03-23 EP disclosed
US-20050058935-A1 Sulfonamide compound, polymer compound, resist material and pattern formation method TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2005-03-17 US disclosed