Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL21122753 | 0.87 | TSHR (0.39) | TSHR | |
| SCHEMBL469130 | 0.87 | TSHR (0.39) | TSHR | |
| SCHEMBL9610672 | 0.85 | TSHR (0.33) | TSHR | |
| SCHEMBL16840298 | 0.84 | TSHR (0.42) | TSHR | |
| SCHEMBL19335247 | 0.82 | TSHR (0.38) | TSHR | |
| SCHEMBL9610671 | 0.81 | TSHR (0.38) | TSHR | |
| SCHEMBL19335362 | 0.81 | TSHR (0.37) | TSHR | |
| SCHEMBL19335293 | 0.80 | TSHR (0.36) | TSHR | |
| SCHEMBL19335296 | 0.80 | TSHR (0.36) | TSHR | |
| SCHEMBL17775477 | 0.80 | TSHR (0.36) | TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 106 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12032290-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-11835849-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-12-05 | — | — | US | disclosed |
| US-20230213862-A1 | PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2023-07-06 | — | — | US | disclosed |
| US-11687001-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-06-27 | — | — | US | disclosed |
| US-20230161249-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND | FUJIFILM CORPORATION (JP) | 2023-05-25 | — | — | US | disclosed |
| US-10042251-B2 | Zwitterionic photo-destroyable quenchers | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2018-08-07 | — | — | US | disclosed |
| US-10042259-B2 | Topcoat compositions and pattern-forming methods | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2018-08-07 | — | — | US | disclosed |
| US-20180118968-A1 | TOPCOAT COMPOSITIONS CONTAINING FLUORINATED THERMAL ACID GENERATORS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2018-05-03 | — | — | US | disclosed |
| US-20180118970-A1 | TOPCOAT COMPOSITIONS AND PATTERN-FORMING METHODS | ROHM AND HAAS ELECTRONIC MATERIALS LLC | 2018-05-03 | — | — | US | disclosed |
| US-20120322006-A1 | Fluorine-Containing Sulfonate Resin, Resist Composition and Pattern Formation Method | CENTRAL GLASS COMPANY, LIMITED (JP) | 2012-12-20 | — | — | US | disclosed |
| US-20120315581-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-13 | — | — | US | disclosed |
| US-20120301823-A1 | POLYMER COMPOSITION AND PHOTORESIST COMPRISING THE POLYMER | DOW GLOBAL TECHNOLOGIES LLC (US) | 2012-11-29 | — | — | US | disclosed |
| US-20120288796-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-15 | — | — | US | disclosed |
| US-20120064459-A1 | Water Repellent Additive for Immersion Resist | CENTRAL GLASS COMPANY, LIMITED (JP) | 2012-03-15 | — | — | US | disclosed |
| US-20120040294-A1 | Top Coating Composition | CENTRAL GLASS COMPANY, LIMITED (JP) | 2012-02-16 | — | — | US | disclosed |
| US-20110305979-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-12-15 | — | — | US | disclosed |
| US-20110236831-A1 | ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110236826-A1 | PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110177455-A1 | POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-21 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10042251-B2 | Zwitterionic photo-destroyable quenchers | CRY1, CRY2, UNG | TSHR 4164/4885 |
| US-11835849-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, TERB1, TRRAP | TSHR 1473/4885 |
| US-11687001-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, TERB1, TRRAP | TSHR 1473/4885 |
| US-20110236826-A1 | PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND | PARG, RAD51, CD38 | TSHR 4493/4885 |
| US-20120322006-A1 | Fluorine-Containing Sulfonate Resin, Resist Composition and Pattern Formation Method | RTRAF, EIF3F, ELF3 | TSHR 2722/4885 |
| US-20110236831-A1 | ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ADH1A, ADH1C, ADH5 | TSHR 4402/4885 |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, COL1A1, RAD51 | TSHR 3144/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.