SCHEMBL9610671

SCHEMBL9610671

C=C(C)C(=O)OC(C)CC(C)(O)C(F)(F)F

nearest known ligand 0.38

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.38
ALDH1A1 P00352 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25561465 0.86 TSHR (0.40) TSHRALDH1A1
SCHEMBL13515124 0.85 TSHR (0.39) TSHRALDH1A1
SCHEMBL14865702 0.85 TSHR (0.39) TSHRALDH1A1
SCHEMBL15000216 0.85 TSHR (0.39) TSHRALDH1A1
SCHEMBL75248 0.85 TSHR (0.39) TSHRALDH1A1
SCHEMBL12267335 0.84 TSHR (0.36) TSHRALDH1A1
SCHEMBL10170900 0.84
SCHEMBL18841495 0.83 TSHR (0.31) TSHR
SCHEMBL14863144 0.83 TSHR (0.35) TSHR
SCHEMBL6849319 0.82 TSHR (0.42) TSHRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 309 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-11835860-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-11835849-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-12-05 US disclosed
US-11815814-B2 Iodized aromatic carboxylic acid type pendant-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-14 US disclosed
US-11796916-B2 Pattern formation methods and photoresist pattern overcoat compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-10-24 US disclosed
US-11786160-B2 Bio-electrode composition, bio-electrode, and method for manufacturing bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-17 US disclosed
US-11754927-B2 Photoresist pattern trimming compositions and pattern formation methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-09-12 US disclosed
US-20230229083-A1 PHOTORESIST COMPOSITIONS FOR EUV AND METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-07-20 US disclosed
US-11703760-B2 Fluorocarboxylic acid-containing monomer, fluorocarboxylic acid-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-18 US disclosed
US-20110236831-A1 ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20110212401-A1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORPORATION (JP) 2011-09-01 US disclosed
US-20110177462-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-21 US disclosed
US-20110177453-A1 Fluorine-Containing Sulfonates Having Polymerizable Anions and Manufacturing Method Therefor, Fluorine-Containing Resins, Resist Compositions, and Pattern-Forming Method Using Same CENTRAL GLASS COMPANY, LIMITED (JP) 2011-07-21 US disclosed
US-20110171580-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 US disclosed
US-20110129777-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-02 US disclosed
US-20110104611-A1 NOVEL COMPOUND, POLYMER, AND RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2011-05-05 US disclosed
US-20110091812-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-04-21 US disclosed
US-20110054133-A1 RESIST POLYMER, PREPARING METHOD, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-03-03 US disclosed
WO-2010140637-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 (JP) 2010-12-09 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110104611-A1 NOVEL COMPOUND, POLYMER, AND RADIATION-SENSITIVE COMPOSITION MRE11, ERCC2, XRCC5 TSHR 2965/4885ALDH1A1 2719/4885
US-20110177453-A1 Fluorine-Containing Sulfonates Having Polymerizable Anions and Manufacturing Method Therefor, Fluorine-Containing Resins, Resist Compositions, and Pattern-Forming Method Using Same WASF2, EEF2, IKZF2 TSHR 2715/4885ALDH1A1 2304/4885
US-11835849-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, TERB1, TRRAP TSHR 1473/4885ALDH1A1 2433/4885
US-11754927-B2 Photoresist pattern trimming compositions and pattern formation methods AHR, ALKBH1, CNOT1 TSHR 2659/4885ALDH1A1 298/4885
US-20110236831-A1 ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ADH1A, ADH1C, ADH5 TSHR 4402/4885ALDH1A1 6/4885
US-11703760-B2 Fluorocarboxylic acid-containing monomer, fluorocarboxylic acid-containing polymer, resist composition and patterning process NAF1, PFN1, COL1A1 TSHR 4479/4885ALDH1A1 640/4885
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, COL1A1, RAD51 TSHR 3144/4885ALDH1A1 762/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.