Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | THRB | P10828 | 3/20 | 0.39 |
| ▸ | THRA | P10827 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27712558 | 0.79 | THRB (0.35) | THRBTHRA | |
| SCHEMBL8835816 | 0.78 | THRB (0.40) | THRBTHRATSHR | |
| SCHEMBL25565205 | 0.78 | L3MBTL1 (0.47) | THRBTHRATSHR | |
| SCHEMBL26038091 | 0.76 | MEN1 (0.39) | THRBTHRA | |
| SCHEMBL6544693 | 0.75 | KDM4E (0.44) | — | |
| SCHEMBL23581636 | 0.75 | THRB (0.38) | THRBTHRA | |
| SCHEMBL13986522 | 0.74 | THRB (0.41) | THRBTHRATSHR | |
| SCHEMBL14173092 | 0.74 | THRB (0.37) | THRBTHRATSHR | |
| SCHEMBL16812655 | 0.74 | THRB (0.37) | THRBTHRATSHR | |
| SCHEMBL26763330 | 0.74 | CYP3A4 (0.41) | THRBTSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110885282-B | Iodonium salt, resist composition and pattern forming method | 信越化学工业株式会社 | 2023-04-18 | — | — | CN | disclosed |
| CN-110885282-A | Iodonium salt, resist composition and pattern forming method | 信越化学工业株式会社 | 2020-03-17 | — | — | CN | disclosed |
| US-20200081341-A1 | IODONIUM SALT, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-03-12 | — | — | US | disclosed |
| US-10310376-B2 | Resist composition, pattern forming process, polymer, and monomer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-06-04 | — | — | US | disclosed |
| EP-3184561-B1 | RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER | SHINETSU CHEMICAL CO (JP) | 2018-10-31 | — | — | EP | disclosed |
| US-20170184967-A1 | RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-06-29 | — | — | US | disclosed |
| EP-3184561-A1 | RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER | Shin-Etsu Chemical Co., Ltd. (JP) | 2017-06-28 | — | — | EP | disclosed |
| US-9535325-B2 | Onium salt, chemically amplified positive resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-03 | — | — | US | disclosed |
| US-9329476-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-03 | — | — | US | disclosed |
| US-9285678-B2 | Sulfonium salt, resist composition and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-03-15 | — | — | US | disclosed |
| US-7527912-B2 | Photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-05 | — | — | US | disclosed |
| EP-2033966-A2 | Movel photoacid generators, resist compositons, and patterning processes | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-03-11 | — | — | EP | disclosed |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | PROXIMAL SYSTEMS CORPORATION | 2009-03-05 | — | — | US | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
| US-20070099113-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-03 | — | — | US | disclosed |
| US-20070099112-A1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-03 | — | — | US | disclosed |
| EP-1780199-A1 | Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-05-02 | — | — | EP | disclosed |
| EP-1780198-A1 | Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-05-02 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, CRY1, CYP21A2 | THRB 2937/4885THRA 1622/4885TSHR 1794/4885 |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | THRB 1594/4885THRA 1710/4885TSHR 1215/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | THRB 3341/4885THRA 3472/4885TSHR 2374/4885 |
| US-20170184967-A1 | RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER | EEF1D, EEF1G, RPL14 | THRB 3605/4885THRA 3531/4885TSHR 4709/4885 |
| US-10310376-B2 | Resist composition, pattern forming process, polymer, and monomer | EEF1D, EEF1G, RPL14 | THRB 3605/4885THRA 3531/4885TSHR 4709/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | THRB 3656/4885THRA 2062/4885TSHR 1699/4885 |
| US-20200081341-A1 | IODONIUM SALT, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | ETV6, ELOVL5, EEF2 | THRB 4088/4885THRA 3955/4885TSHR 2305/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.