SCHEMBL501365

SCHEMBL501365

C=CC(=O)Oc1ccccc1[S+](c1ccccc1)c1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
THRB P10828 4/20 0.43
THRA P10827 1/20 0.43
KDM4E B2RXH2 3/20 0.40
MAPT P10636 2/20 0.40
HPGD P15428 2/20 0.40
HSD17B10 Q99714 2/20 0.40
TYMS P04818 1/20 0.36
AKT1 P31749 1/20 0.35
ESR1 P03372 2/20 0.33
ESR2 Q92731 1/20 0.33
TGM2 P21980 1/20 0.33
TDP1 Q9NUW8 2/20 0.32
LIG1 P18858 1/20 0.32
ATM Q13315 1/20 0.32
PTGDR2 Q9Y5Y4 1/20 0.32
PDE6D O43924 1/20 0.32
KMT2A Q03164 2/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
ALDH1A1 P00352 1/20 0.31
ITGB3 P05106 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL9680879 0.87 THRB (0.36) THRBTHRAKDM4EMAPTHPGD
SCHEMBL9543319 0.80 THRB (0.49) THRBTHRAKDM4EMAPTHPGD
SCHEMBL3841280 0.78 THRB (0.56) THRBTHRAKDM4EMAPTHPGD
SCHEMBL29413361 0.78 THRB (0.56) THRBTHRAKDM4EMAPTHPGD
SCHEMBL30249447 0.78 PTGS2 (0.53) KDM4EMAPTHPGDHSD17B10ESR1
SCHEMBL246707 0.78 THRB (0.47) THRBTHRAKDM4EMAPTHPGD
SCHEMBL3203771 0.78 PTGS2 (0.53) KDM4EMAPTHPGDHSD17B10ESR1
SCHEMBL3198775 0.77 KMT2A (0.56) MAPTHSD17B10ESR1ESR2TDP1
SCHEMBL7170318 0.75 THRB (0.50) THRBTHRAKDM4EMAPTHPGD
SCHEMBL31005112 0.75 PTGS2 (0.53) KDM4EMAPTHPGDHSD17B10ESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-30 US disclosed
US-10234757-B2 Polymer, making method, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-03-19 US disclosed
EP-2664633-B1 POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2018-11-07 EP disclosed
US-10054853-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-08-21 US disclosed
US-20170299963-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-19 US disclosed
US-9162967-B2 Sulfonium salt, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-20 US disclosed
US-9146464-B2 Sulfonium salt, polymer, polymer making method, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-29 US disclosed
US-9091918-B2 Sulfonium salt, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-28 US disclosed
US-8957160-B2 Preparation of polymer, resulting polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-17 US disclosed
US-20140272707-A1 SULFONIUM SALT, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-18 US disclosed
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-22 US disclosed
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-04 US disclosed
US-20090269696-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-29 US disclosed
EP-2112554-A2 Sulfonium salt-containing polymer, resist composition, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-10-28 EP disclosed
US-20090233223-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-17 US disclosed
EP-2101217-A1 Sulfonium salt-containing polymer, resist compositon, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-09-16 EP disclosed
EP-2090931-A1 Positive resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-08-19 EP disclosed
US-20090202943-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-13 US disclosed
US-7569326-B2 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-20080102407-A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100099042-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, ASH2L THRB 3234/4885THRA 2226/4885KDM4E 3411/4885
US-20230384677-A1 ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS INSR, INSRR, SLC6A5 THRB 1228/4885THRA 1498/4885KDM4E 3855/4885
US-10054853-B2 Monomer, polymer, resist composition, and patterning process ASIC1, PKD1, ARCN1 THRB 3986/4885THRA 3733/4885KDM4E 4115/4885
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, RAD54L THRB 3542/4885THRA 2576/4885KDM4E 3334/4885
US-20170299963-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ASIC1, PKD1, ARCN1 THRB 3986/4885THRA 3733/4885KDM4E 4115/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.