Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 1/20 | 0.42 |
| ▸ | SOS1 | Q07889 | 1/20 | 0.40 |
| ▸ | CA2 | P00918 | 3/20 | 0.39 |
| ▸ | MMP2 | P08253 | 2/20 | 0.39 |
| ▸ | CA1 | P00915 | 2/20 | 0.39 |
| ▸ | MMP1 | P03956 | 1/20 | 0.39 |
| ▸ | MMP9 | P14780 | 1/20 | 0.39 |
| ▸ | MMP8 | P22894 | 1/20 | 0.39 |
| ▸ | MMP13 | P45452 | 1/20 | 0.39 |
| ▸ | PKM | P14618 | 2/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.37 |
| ▸ | ABCC9 | O60706 | 1/20 | 0.36 |
| ▸ | ABCC8 | Q09428 | 1/20 | 0.36 |
| ▸ | KCNJ11 | Q14654 | 1/20 | 0.36 |
| ▸ | KCNJ8 | Q15842 | 1/20 | 0.36 |
| ▸ | F2 | P00734 | 2/20 | 0.36 |
| ▸ | PRSS1 | P07477 | 2/20 | 0.36 |
| ▸ | PRSS2 | P07478 | 2/20 | 0.36 |
| ▸ | PRSS3 | P35030 | 2/20 | 0.36 |
| ▸ | FFAR1 | O14842 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL503373 | 0.94 | PKM (0.46) | HSD11B1PKMALDH1A1FFAR1FFAR4 | |
| SCHEMBL3130157 | 0.94 | PKM (0.46) | HSD11B1PKMALDH1A1FFAR1FFAR4 | |
| SCHEMBL9135546 | 0.91 | ACHE (0.46) | HSD11B1ALDH1A1FFAR4MEN1KMT2A | |
| SCHEMBL4848809 | 0.88 | PKM (0.46) | HSD11B1SOS1CA2MMP2CA1 | |
| SCHEMBL37033 | 0.83 | HTR6 (0.42) | HSD11B1CA2MMP2CA1MMP1 | |
| SCHEMBL562440 | 0.82 | ALDH1A1 (0.45) | HSD11B1CA2MMP2CA1MMP1 | |
| SCHEMBL36225 | 0.82 | GAA (0.45) | CA2MMP2CA1MMP1MMP9 | |
| SCHEMBL3146242 | 0.82 | LMNA (0.43) | HSD11B1CA2CA1PKMFFAR4 | |
| SCHEMBL1803692 | 0.82 | KIF11 (0.47) | HSD11B1CA2CA1MMP1ALDH1A1 | |
| SCHEMBL1802639 | 0.80 | CA1 (0.46) | HSD11B1SOS1CA2MMP2CA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 178 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2026100410-A1 | IODINE-CONTAINING POLYMERIZABLE COMPOUND AND IODINE-CONTAINING POLYMER | 三菱瓦斯化学株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230096312-A1 | RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-03-30 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| WO-2023008355-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION | 三菱瓦斯化学株式会社 | 2023-02-02 | — | — | WO | disclosed |
| WO-2023008354-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2023-02-02 | — | — | WO | disclosed |
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-10-25 | — | — | US | disclosed |
| US-20060188812-A1 | Phenolic hydroxyl group-containing copolymer and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-08-24 | — | — | US | disclosed |
| EP-1686424-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2006-08-02 | — | — | EP | disclosed |
| US-20060166138-A1 | Radiation-sensitive resin composition | JSR CORPORATION | 2006-07-27 | — | — | US | disclosed |
| EP-1666970-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2006-06-07 | — | — | EP | disclosed |
| US-20060078821-A1 | A caroboxyalkylanthracene based compound, a hydroxy or alkoxystyrene polymer, and a sulfonimide compound as photoacid generator; low sublimation properties and excellent compatibility with other components; exhibits optimum controllability of radiation transmittance; microfabrication | JSR CORPORATION (JP) | 2006-04-13 | — | — | US | disclosed |
| EP-1640804-A2 | Positive-tone radiation-sensitive resin composition | JSR Corporation (JP) | 2006-03-29 | — | — | EP | disclosed |
| US-20050053861-A1 | Onium salt compound and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-03-10 | — | — | US | disclosed |
| US-20040191672-A1 | Resist composition | MITSUBISHI GAS CHEMICAL CO., LTD. (JP) | 2004-09-30 | — | — | US | disclosed |
| EP-1443362-A2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2004-08-04 | — | — | EP | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | SLC11A2, ABCC1, FBL | HSD11B1 1689/4885SOS1 3877/4885CA2 3898/4885 |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | HSD11B1 2144/4885SOS1 535/4885CA2 3332/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | HSD11B1 2424/4885SOS1 2631/4885CA2 1466/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.