SCHEMBL5405474

SCHEMBL5405474

CCc1cc(CC)c(S(=O)(=O)ON2C(=O)CCC2=O)c(CC)c1

nearest known ligand 0.46

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
▸ PARL Q9H300 2/20 0.46
▸ KDM4E B2RXH2 2/20 0.41
▸ MAPT P10636 2/20 0.41
▸ ALDH1A1 P00352 1/20 0.41
▸ F2 P00734 1/20 0.41
▸ VDR P11473 1/20 0.41
▸ CYP1A2 P05177 1/20 0.33
▸ CYP3A4 P08684 1/20 0.33
▸ HPGD P15428 1/20 0.33
▸ XBP1 P17861 1/20 0.33
▸ CYP2C19 P33261 1/20 0.33
▸ NPSR1 Q6W5P4 1/20 0.33
▸ AR P10275 1/20 0.31
▸ CA12 O43570 1/20 0.30
▸ CA1 P00915 1/20 0.30
▸ CA2 P00918 1/20 0.30
▸ CA9 Q16790 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2952194 0.78 ALDH1A1 (0.66) PARLKDM4EMAPTALDH1A1F2
SCHEMBL65774 0.72 PARL (0.50) PARLKDM4EMAPTALDH1A1F2
SCHEMBL5405470 0.72 HSPA5 (0.32) CYP1A2CYP3A4
SCHEMBL16990204 0.69 PARL (0.50) PARLKDM4EMAPTALDH1A1CYP1A2
SCHEMBL16990198 0.69 PARL (0.50) PARLKDM4EMAPTALDH1A1CYP1A2
SCHEMBL12339094 0.68 PARL (0.81) PARLKDM4EMAPTALDH1A1F2
SCHEMBL64833 0.68 PARL (0.47) PARLKDM4EMAPTALDH1A1F2
SCHEMBL2958503 0.68 FABP4 (0.47) PARLKDM4EMAPTALDH1A1CYP1A2
SCHEMBL503521 0.67 PARL (0.52) PARLKDM4EMAPTALDH1A1HPGD
SCHEMBL14569432 0.67 PARL (0.55) PARLKDM4EMAPTALDH1A1F2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7303785-B2 Antireflective film material, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-04 — — US disclosed
US-20040253461-A1 Antireflective film material, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-16 — — US disclosed
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