Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP19A1 | P11511 | 4/20 | 0.40 |
| ▸ | CYP17A1 | P05093 | 3/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.38 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.38 |
| ▸ | CA2 | P00918 | 1/20 | 0.37 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.36 |
| ▸ | TSHR | P16473 | 1/20 | 0.36 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.35 |
| ▸ | NAAA | Q02083 | 1/20 | 0.34 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | CASR | P41180 | 1/20 | 0.31 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14294660 | 0.90 | ALDH1A1 (0.35) | CYP19A1CYP17A1ALDH1A1L3MBTL1CA2 | |
| SCHEMBL21392229 | 0.88 | CYP19A1 (0.34) | CYP19A1CYP17A1ALDH1A1L3MBTL1CA2 | |
| SCHEMBL19261603 | 0.88 | TSHR (0.52) | CYP19A1CYP17A1ALDH1A1L3MBTL1CA2 | |
| SCHEMBL2605932 | 0.88 | TSHR (0.35) | CYP19A1CYP17A1ALDH1A1L3MBTL1CA2 | |
| SCHEMBL547287 | 0.88 | TSHR (0.52) | CYP19A1CYP17A1ALDH1A1L3MBTL1CA2 | |
| SCHEMBL19042425 | 0.86 | CA2 (0.41) | CYP19A1CYP17A1CA2NPSR1TSHR | |
| SCHEMBL10168175 | 0.86 | CYP19A1 (0.41) | CYP19A1CYP17A1ALDH1A1CA2NPSR1 | |
| SCHEMBL687256 | 0.85 | TSHR (0.39) | CYP19A1CYP17A1ALDH1A1L3MBTL1CA2 | |
| SCHEMBL38656000 | 0.85 | CYP19A1 (0.37) | CYP19A1CYP17A1CA2NPSR1TSHR | |
| SCHEMBL13225284 | 0.85 | CYP19A1 (0.37) | CYP19A1CYP17A1CA2NPSR1TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 403 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2026100367-A1 | RESIST MATERIAL AND PATTERN FORMATION METHOD | 東京応化工業株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-20240241444-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2024-07-18 | — | — | US | disclosed |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-20230384674-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-30 | — | — | US | disclosed |
| US-20230384674-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-30 | — | — | US | disclosed |
| US-11796912-B2 | Radiation-sensitive composition and pattern-forming method | JSR CORPORATION (JP) | 2023-10-24 | — | — | US | disclosed |
| US-11796912-B2 | Radiation-sensitive composition and pattern-forming method | JSR CORPORATION (JP) | 2023-10-24 | — | — | US | disclosed |
| US-20230280652-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING MONOMERIC COMPOUND | JSR CORPORATION (JP) | 2023-09-07 | — | — | US | disclosed |
| US-11740555-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-08-29 | — | — | US | disclosed |
| US-11709428-B2 | Radiation-sensitive resin composition, method for forming pattern, and method for producing monomeric compound | JSR CORPORATION (JP) | 2023-07-25 | — | — | US | disclosed |
| US-7566522-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-07-28 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080248423-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080220369-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080213695-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-04 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080176168-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-24 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-31 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11740555-B2 | Resist composition and method for producing resist pattern | RER1, GAR1, REV1 | CYP19A1 1306/4885CYP17A1 1449/4885ALDH1A1 356/4885 |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN3, NHERF1, HCN4 | CYP19A1 415/4885CYP17A1 190/4885ALDH1A1 972/4885 |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, COL1A1, RAD51 | CYP19A1 1624/4885CYP17A1 3270/4885ALDH1A1 762/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.