SCHEMBL63169

SCHEMBL63169

Cc1ccc(S(=O)(=O)OS(c2ccccc2)(C2CCCCC2)C2CCCCC2)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.43
CYP3A4 P08684 2/20 0.43
TSHR P16473 1/20 0.43
ENPP3 O14638 2/20 0.41
ENPP1 P22413 2/20 0.41
ENPP2 Q13822 2/20 0.41
MEN1 O00255 2/20 0.40
KMT2A Q03164 2/20 0.40
KDM4E B2RXH2 2/20 0.40
CYP2C19 P33261 1/20 0.40
GAA P10253 1/20 0.40
APLNR P35414 2/20 0.39
POLB P06746 1/20 0.39
VDR P11473 1/20 0.39
SMN1; SMN2 Q16637 2/20 0.39
HTT P42858 1/20 0.39
PKM P14618 1/20 0.38
LMNA P02545 1/20 0.38
TP53 P04637 1/20 0.38
MAPT P10636 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11340011 0.78 GAA (0.43) ALDH1A1CYP3A4MEN1KMT2ACYP2C19
SCHEMBL3267933 0.78 HTT (0.53) ALDH1A1CYP3A4MEN1KMT2AKDM4E
SCHEMBL3129136 0.77 LMNA (0.53) ALDH1A1CYP3A4TSHRENPP3ENPP1
SCHEMBL64447 0.75 ALDH1A1 (0.40) ALDH1A1ENPP3ENPP1ENPP2MEN1
SCHEMBL2962485 0.73 VDR (0.49) ALDH1A1CYP3A4MEN1KMT2AKDM4E
SCHEMBL64190 0.73 VDR (0.49) ALDH1A1CYP3A4MEN1KMT2AKDM4E
SCHEMBL2955938 0.73 VDR (0.49) ALDH1A1CYP3A4MEN1KMT2AKDM4E
SCHEMBL2964106 0.73 VDR (0.49) ALDH1A1CYP3A4MEN1KMT2AKDM4E
SCHEMBL3144536 0.73 VDR (0.49) ALDH1A1CYP3A4MEN1KMT2AKDM4E
SCHEMBL64622 0.72 VDR (0.47) ALDH1A1CYP3A4MEN1KMT2AKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 770 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2026-05-28 US disclosed
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-02 US disclosed
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-03-24 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
EP-4675357-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-01-07 EP disclosed
EP-4664197-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-17 EP disclosed
US-12448485-B2 Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-10-21 US disclosed
US-20250298315-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-25 US disclosed
EP-4617775-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT-EMITTING ELEMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-17 EP disclosed
EP-4610254-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2025-09-03 EP disclosed
US-6066433-A SILICONE POLYMER CONTAINING PHENOLIC HYDROXYL GROUPS HAVING HYDROGEN ATOMS OF SOME PHENOLIC HYDROXYL GROUPS REPLACED BY ACID LABILE GROUPS, CROSSLINKED AT SOME OF THE REMAINING PHENOLIC HYDROXYL GROUPS WITH GROUPS HAVING ETHER LINKAGES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-05-23 US disclosed
US-6033828-A POLYVINYLPHENOL DERIVATIVES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-03-07 US disclosed
US-6027854-A ACTINIC RADIATION-SENSITIVE, CROSSLINKED TERPOLYMER CONTAINING STYRENIC GROUPS RING-SUBSTITUTED WITH HYDROXYL, HYDROXYALKYLOXY, CARBOXYALKYLOXY MOIETIES AND ACID LABILE GROUPS; ETCHING AND HEAT RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. 2000-02-22 US disclosed
US-5972559-A A PHOTORESIST MIXTURE COMPRISING AN ORGANIC SOLVENT, A COPOLYCARBONS BASE RESIN, A PHOTOACID GENERATOR, AND AN AROMATIC ALKYLENE CARBOXYLIC ACID COMPOUND; FOR IMPROVING THE FOOTING ON NITRIDE FILM SUBSTRATES AND POST EXPOSURE DELAY SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-10-26 US disclosed
US-5972560-A A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-10-26 US disclosed
US-5942367-A HIGH SENSITIVITY, RESOLUTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-08-24 US disclosed
EP-0908783-A1 Resist compositions, their preparation and use for patterning processes SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
EP-0908473-A1 Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
US-5876900-A POLYHYDROXYSTYRENE POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-02 US disclosed
EP-0887705-A1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-30 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 ALDH1A1 841/4885CYP3A4 2035/4885TSHR 2827/4885
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT CBR3, CBR1, NOTUM ALDH1A1 827/4885CYP3A4 216/4885TSHR 2453/4885
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION RPS21, CA11, RPL21 ALDH1A1 1875/4885CYP3A4 2893/4885TSHR 1950/4885
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component PRDM9, ARCN1, PUF60 ALDH1A1 3281/4885CYP3A4 3318/4885TSHR 3402/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.