SCHEMBL6367229

SCHEMBL6367229

CCC(C)C(=O)OC1C2CC3C1OC(=O)C3C2C

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HMGCR P04035 6/20 0.36
CYP3A4 P08684 6/20 0.36
LMNA P02545 5/20 0.36
HIF1A Q16665 4/20 0.36
TSHR P16473 4/20 0.36
SMN1; SMN2 Q16637 4/20 0.36
ABCB11 O95342 3/20 0.36
KDM4E B2RXH2 2/20 0.36
ITGB2 P05107 2/20 0.36
ICAM1 P05362 2/20 0.36
PGR P06401 2/20 0.36
ABCB1 P08183 2/20 0.36
ADORA3 P0DMS8 2/20 0.36
MAPT P10636 2/20 0.36
ADRB3 P13945 2/20 0.36
ALOX15 P16050 2/20 0.36
ITGAL P20701 2/20 0.36
TACR2 P21452 2/20 0.36
TBXA2R P21731 2/20 0.36
SLC6A2 P23975 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14489036 0.90 HMGCR (0.32) HMGCRCYP3A4LMNAHIF1ATSHR
SCHEMBL18845061 0.86
SCHEMBL14488868 0.86 PRKCA (0.32) HMGCRCYP3A4LMNAHIF1ATSHR
SCHEMBL12405799 0.85 HMGCR (0.33) HMGCRCYP3A4LMNAHIF1ATSHR
SCHEMBL17853802 0.85 HMGCR (0.33) HMGCRCYP3A4LMNAHIF1ATSHR
SCHEMBL13004618 0.85 HMGCR (0.32) HMGCRCYP3A4LMNAHIF1ATSHR
SCHEMBL12533392 0.84 HMGCR (0.33) HMGCRCYP3A4LMNAHIF1ATSHR
SCHEMBL12761086 0.84 HMGCR (0.33) HMGCRCYP3A4LMNAHIF1ATSHR
SCHEMBL824265 0.84 ALDH1A1 (0.33) HMGCRCYP3A4LMNAHIF1ATSHR
SCHEMBL6367919 0.83 KMT2A (0.33) HMGCRCYP3A4LMNAHIF1ATSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 113 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9790166-B2 Polymer, monomer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-17 US disclosed
US-9758609-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9758609-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-11 US disclosed
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-11 US disclosed
US-20160342086-A1 POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-24 US disclosed
US-20160342086-A1 POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-24 US disclosed
US-20160238930-A1 HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-18 US disclosed
US-20090246694-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-01 US disclosed
US-20090239179-A1 HYDROXYL-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-24 US disclosed
US-20090233242-A1 LACTONE-CONTAINING COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-17 US disclosed
US-7569326-B2 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS PROXIMAL SYSTEMS CORPORATION 2009-03-05 US disclosed
US-20090035699-A1 FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-05 US disclosed
US-20080102407-A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-7291441-B2 Positive resist composition and pattern forming method utilizing the same FUJIFILM CORPORATION (JP) 2007-11-06 US disclosed
US-20070054217-A1 Positive photosensitive composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-08 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, CRY1, CYP21A2 HMGCR 346/4885CYP3A4 986/4885LMNA 3801/4885
US-20090246694-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS ASIC1, HAO2, HRH3 HMGCR 2006/4885CYP3A4 997/4885LMNA 4495/4885
US-20160238930-A1 HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-3, H1-0, H1-2 HMGCR 1623/4885CYP3A4 1680/4885LMNA 2060/4885
US-20090239179-A1 HYDROXYL-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS RAD51, REV1, H1-0 HMGCR 929/4885CYP3A4 2114/4885LMNA 1374/4885
US-20090035699-A1 FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS C1R, AFF1, HRH3 HMGCR 2465/4885CYP3A4 1906/4885LMNA 1164/4885
US-20090233242-A1 LACTONE-CONTAINING COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS WDR5, RER1, H1-5 HMGCR 542/4885CYP3A4 1520/4885LMNA 666/4885
US-20160342086-A1 POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS PARG, RAD1, POLR1A HMGCR 1658/4885CYP3A4 4337/4885LMNA 711/4885
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-2, H1-0, H1-4 HMGCR 3869/4885CYP3A4 3381/4885LMNA 780/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.