Known targets — ChEMBL curated mechanism
ABL1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB2AGTR1BCL2BCL2A1BCL2L1BCL2L10BCL2L2BCRBRAFCHRM1CHRNA10CHRNA9DRD1DRD2DRD3DRD4DRD5EGFRF2FLT1FLT4GCKGHSRGNRHRGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHTR1AHTR1BHTR1DHTR2AHTR2CHTR3AIDH2KDRKITMAOBMCL1MTTPPP4HBPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PIKFYVEROCK1ROCK2SLC18A2SLC6A2SLC6A3SLC6A4TACR1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8gyrAgyrBparCparEpol
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Benzene SCHEMBL28164186 | 0.93 | PARL (0.41) | PARL | |
| SCHEMBL64592 | 0.90 | BRD4 (0.36) | — | |
| Sulfuric Acid SCHEMBL4450384 | 0.89 | CA5A (0.35) | PARLCA2 | |
| SCHEMBL64832 | 0.85 | KMT2A (0.30) | — | |
| SCHEMBL63448 | 0.83 | GAA (0.33) | — | |
| SCHEMBL338264 | 0.83 | KDM4E (0.34) | — | |
| SCHEMBL1123 | 0.83 | — | — | |
| SCHEMBL785147 | 0.83 | — | — | |
| SCHEMBL8058954 | 0.80 | CA12 (0.32) | CA2 | |
| SCHEMBL28950377 | 0.80 | PARL (0.31) | PARL |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 488 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240294771-A1 | ANTI-REFLECTIVE COATING COMPOSITION AND CROSSLINKABLE POLYMER | Tan Kah Kee Innovation Laboratory (CN) | 2024-09-05 | — | — | US | claimed |
| CN-117452768-A | Composition for immersion photoresist top coating | 徐州博康信息化学品有限公司 | 2024-01-26 | — | — | CN | claimed |
| WO-2023070957-A1 | ANTI-REFLECTIVE COATING COMPOSITION AND CROSSLINKABLE POLYMER | 嘉庚创新实验室 | 2023-05-04 | — | — | WO | claimed |
| CN-113913075-B | Anti-reflective coating composition and crosslinkable polymer | 嘉庚创新实验室 | 2022-09-20 | — | — | CN | claimed |
| CN-113913075-A | Anti-reflective coating composition and crosslinkable polymer | 嘉庚创新实验室 | 2022-01-11 | — | — | CN | claimed |
| CN-122037094-A | Block copolymer having cleavable main chain, photoresist composition comprising the same, and pattern forming method | 杜邦电子材料国际有限责任公司 | 2026-05-15 | — | — | CN | disclosed |
| US-20260118762-A1 | POLYMER FOR PHOTOLITHOGRAPHIC MEDIUM COMPOSITION, AND PHOTOLITHOGRAPHIC MEDIUM COMPOSITION | Tan Kah Kee Innovation Laboratory (CN) | 2026-04-30 | — | — | US | disclosed |
| US-20260118761-A1 | COMPOUND FOR PHOTOLITHOGRAPHIC MEDIUM COMPOSITION, POLYMER, AND PHOTOLITHOGRAPHIC MEDIUM COMPOSITION | Tan Kah Kee Innovation Laboratory (CN) | 2026-04-30 | — | — | US | disclosed |
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| US-20250231488-A1 | ANTI-REFLECTIVE COATING COMPOSITION | Tan Kah Kee Innovation Laboratory (CN) | 2025-07-17 | — | — | US | disclosed |
| CN-119798525-A | Resin for immersion photoresist, preparation method and immersion photoresist | 宁波南大光电材料有限公司 | 2025-04-11 | — | — | CN | disclosed |
| EP-1085377-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1053985-A1 | Resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2000-11-22 | — | — | EP | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
| EP-0589451-B1 | Photoresist Compositiom | SUMITOMO CHEMICAL CO (JP) | 1998-12-02 | — | — | EP | disclosed |
| EP-0589451-A2 | Photoresist Compositiom | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1994-03-30 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | PARL 1432/4885CA2 291/4885 |
| US-20260118761-A1 | COMPOUND FOR PHOTOLITHOGRAPHIC MEDIUM COMPOSITION, POLYMER, AND PHOTOLITHOGRAPHIC MEDIUM COMPOSITION | RAD51, COL2A1, MRPL11 | PARL 389/4885CA2 973/4885 |
| US-20260118762-A1 | POLYMER FOR PHOTOLITHOGRAPHIC MEDIUM COMPOSITION, AND PHOTOLITHOGRAPHIC MEDIUM COMPOSITION | SEC23B, SEC23IP, SEC16A | PARL 40/4885CA2 2497/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.