Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PTPN1 | P18031 | 1/20 | 0.51 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.48 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.48 |
| ▸ | HPGD | P15428 | 2/20 | 0.48 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.46 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.46 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.46 |
| ▸ | CES2 | O00748 | 1/20 | 0.46 |
| ▸ | CES1 | P23141 | 1/20 | 0.46 |
| ▸ | NPC1 | O15118 | 2/20 | 0.46 |
| ▸ | RAB9A | P51151 | 2/20 | 0.46 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.46 |
| ▸ | CBX7 | O95931 | 1/20 | 0.44 |
| ▸ | CDYL2 | Q8N8U2 | 1/20 | 0.44 |
| ▸ | CDYL | Q9Y232 | 1/20 | 0.44 |
| ▸ | CDY1; CDY1B | Q9Y6F8 | 1/20 | 0.44 |
| ▸ | HDAC1 | Q13547 | 2/20 | 0.43 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.43 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.43 |
| ▸ | MAPT | P10636 | 1/20 | 0.42 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL686213 | 0.86 | PTPN1 (0.56) | PTPN1SMN1; SMN2KDM4EHPGDCES2 | |
| Bromide SCHEMBL2515173 | 0.85 | PTPN1 (0.54) | PTPN1SMN1; SMN2KDM4EHPGDCES2 | |
| SCHEMBL686323 | 0.85 | PTPN1 (0.54) | PTPN1SMN1; SMN2KDM4EHPGDCES2 | |
| SCHEMBL685960 | 0.81 | ALDH1A1 (0.49) | PTPN1SMN1; SMN2KDM4EHPGDCYP1A2 | |
| SCHEMBL2330936 | 0.80 | PTPN1 (0.49) | PTPN1SMN1; SMN2KDM4EHPGDCES2 | |
| SCHEMBL19469347 | 0.78 | PTPN1 (0.47) | PTPN1SMN1; SMN2KDM4EHPGDCES2 | |
| SCHEMBL2330933 | 0.78 | PTPN1 (0.47) | PTPN1SMN1; SMN2KDM4EHPGDCES2 | |
| Sulfuric Acid SCHEMBL5849612 | 0.76 | PTPN1 (0.44) | PTPN1SMN1; SMN2KDM4EHPGDCES2 | |
| Trifluoromethanesulfonic Acid SCHEMBL546703 | 0.75 | PTPN1 (0.43) | PTPN1SMN1; SMN2KDM4EHPGDCES2 | |
| SCHEMBL30848626 | 0.73 | PTPN1 (0.51) | PTPN1SMN1; SMN2KDM4EHPGDCYP1A2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 322 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230350294-A1 | Negative Photosensitive Resin Composition, Patterning Process, Interlayer Insulating Film, Surface Protection Film, And Electronic Component | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-02 | — | — | US | disclosed |
| US-20230350294-A1 | Negative Photosensitive Resin Composition, Patterning Process, Interlayer Insulating Film, Surface Protection Film, And Electronic Component | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-02 | — | — | US | disclosed |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-20230137472-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230137472-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-11560355-B2 | Onium salt, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-01-24 | — | — | US | disclosed |
| US-11333974-B2 | Onium salt, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-05-17 | — | — | US | disclosed |
| US-20220107560-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-04-07 | — | — | US | disclosed |
| US-11215926-B2 | Sulfonium compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-04 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070184382-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-08-09 | — | — | US | disclosed |
| US-20070149702-A1 | Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED | 2007-06-28 | — | — | US | disclosed |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-03 | — | — | US | disclosed |
| US-7211367-B2 | Photo acid generator, chemical amplification resist material | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-01 | — | — | US | disclosed |
| US-7205090-B2 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-17 | — | — | US | disclosed |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
| US-7175963-B2 | Chemical amplification type positive resist composition and a resin therefor | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-13 | — | — | US | disclosed |
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20220107560-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, KAT5, PKD1 | PTPN1 3495/4885SMN1; SMN2 3471/4885KDM4E 949/4885 |
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, NHERF1, HCN4 | PTPN1 1082/4885SMN1; SMN2 4745/4885KDM4E 2588/4885 |
| US-11333974-B2 | Onium salt, chemically amplified resist composition, and patterning process | ARF5, EIF2B3, KAT5 | PTPN1 3751/4885SMN1; SMN2 3568/4885KDM4E 542/4885 |
| US-11560355-B2 | Onium salt, chemically amplified resist composition, and patterning process | ARF5, EIF2B5, EIF2B3 | PTPN1 3450/4885SMN1; SMN2 3859/4885KDM4E 760/4885 |
| US-11215926-B2 | Sulfonium compound, resist composition, and patterning process | HNRNPU, PAG1, LSM14A | PTPN1 2958/4885SMN1; SMN2 2787/4885KDM4E 2372/4885 |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | ETV6, PKD1, PKD2 | PTPN1 4501/4885SMN1; SMN2 3799/4885KDM4E 1025/4885 |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN3, NHERF1, HCN4 | PTPN1 990/4885SMN1; SMN2 4545/4885KDM4E 2927/4885 |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN4, HCN3, HCN1 | PTPN1 582/4885SMN1; SMN2 4515/4885KDM4E 2848/4885 |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, RFC1, RFC2 | PTPN1 1482/4885SMN1; SMN2 3880/4885KDM4E 3848/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.