Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.49 |
| ▸ | MAPT | P10636 | 5/20 | 0.49 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.49 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.47 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.47 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.45 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.45 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.45 |
| ▸ | MEN1 | O00255 | 2/20 | 0.45 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.45 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.45 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.45 |
| ▸ | HPGD | P15428 | 1/20 | 0.45 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.45 |
| ▸ | CES1 | P23141 | 1/20 | 0.45 |
| ▸ | RAB9A | P51151 | 2/20 | 0.43 |
| ▸ | NPC1 | O15118 | 1/20 | 0.43 |
| ▸ | TSHR | P16473 | 1/20 | 0.42 |
| ▸ | GSK3B | P49841 | 2/20 | 0.42 |
| ▸ | HIF1A | Q16665 | 2/20 | 0.42 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL98167 | 0.83 | KMT2A (0.50) | ALDH1A1MAPTKMT2ACYP1A2CYP2C9 | |
| Hydrochloric Acid SCHEMBL4028699 | 0.81 | KMT2A (0.48) | ALDH1A1MAPTKMT2ACYP1A2CYP2C9 | |
| SCHEMBL685958 | 0.81 | KMT2A (0.48) | ALDH1A1MAPTKMT2ACYP1A2CYP2C9 | |
| Bromide SCHEMBL482705 | 0.81 | KMT2A (0.48) | ALDH1A1MAPTKMT2ACYP1A2CYP2C9 | |
| SCHEMBL685952 | 0.81 | PTPN1 (0.51) | ALDH1A1MAPTKMT2ACYP1A2SMN1; SMN2 | |
| SCHEMBL715255 | 0.77 | KMT2A (0.44) | ALDH1A1MAPTKMT2ACYP1A2CYP2C9 | |
| SCHEMBL686332 | 0.74 | SMN1; SMN2 (0.53) | ALDH1A1MAPTCYP1A2CYP2C9SMN1; SMN2 | |
| SCHEMBL2754884 | 0.73 | ERCC5 (0.54) | ALDH1A1SMN1; SMN2HPGDERCC5FEN1 | |
| Trifluoromethanesulfonic Acid SCHEMBL3096657 | 0.70 | MAPT (0.37) | ALDH1A1MAPTKMT2ASMN1; SMN2MAPK1 | |
| SCHEMBL8737972 | 0.70 | HPGD (0.49) | ALDH1A1MAPTKMT2ASMN1; SMN2MAPK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 399 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230350294-A1 | Negative Photosensitive Resin Composition, Patterning Process, Interlayer Insulating Film, Surface Protection Film, And Electronic Component | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-02 | — | — | US | disclosed |
| US-20230350294-A1 | Negative Photosensitive Resin Composition, Patterning Process, Interlayer Insulating Film, Surface Protection Film, And Electronic Component | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-02 | — | — | US | disclosed |
| US-20230341775-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-26 | — | — | US | disclosed |
| US-20230341775-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-26 | — | — | US | disclosed |
| EP-4258056-A2 | ALCOHOL COMPOUND, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-11 | — | — | EP | disclosed |
| US-11773059-B2 | Onium salt, chemically amplified negative resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-03 | — | — | US | disclosed |
| US-11773059-B2 | Onium salt, chemically amplified negative resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-03 | — | — | US | disclosed |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| EP-4047418-B1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2023-08-16 | — | — | EP | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070184382-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-08-09 | — | — | US | disclosed |
| US-20070149702-A1 | Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED | 2007-06-28 | — | — | US | disclosed |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-03 | — | — | US | disclosed |
| US-7211367-B2 | Photo acid generator, chemical amplification resist material | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-01 | — | — | US | disclosed |
| US-7205090-B2 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-17 | — | — | US | disclosed |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
| US-7175963-B2 | Chemical amplification type positive resist composition and a resin therefor | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-13 | — | — | US | disclosed |
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, NHERF1, HCN4 | ALDH1A1 1292/4885MAPT 4762/4885KMT2A 660/4885 |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | IDUA, SLC6A5, SLC6A9 | ALDH1A1 4322/4885MAPT 1694/4885KMT2A 2745/4885 |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN3, NHERF1, HCN4 | ALDH1A1 972/4885MAPT 4704/4885KMT2A 472/4885 |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN4, HCN3, HCN1 | ALDH1A1 1296/4885MAPT 4756/4885KMT2A 561/4885 |
| US-11773059-B2 | Onium salt, chemically amplified negative resist composition, and pattern forming process | LBR, IDUA, ADORA1 | ALDH1A1 3067/4885MAPT 1883/4885KMT2A 3089/4885 |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, RFC1, RFC2 | ALDH1A1 1641/4885MAPT 4784/4885KMT2A 950/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.