SCHEMBL6926552

SCHEMBL6926552

Cc1ccccc1C(=[N+]=[N-])S(=O)(=O)c1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
MAPT P10636 3/20 0.38
ALDH1A1 P00352 3/20 0.38
GAA P10253 1/20 0.38
KAT6A Q92794 1/20 0.38
HPGD P15428 1/20 0.38
FLT1 P17948 1/20 0.37
FLT4 P35916 1/20 0.37
KDR P35968 1/20 0.37
ERCC5 P28715 1/20 0.37
FEN1 P39748 1/20 0.37
TP53 P04637 1/20 0.36
HTT P42858 1/20 0.36
HSD17B10 Q99714 1/20 0.36
TSHR P16473 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
KMT2A Q03164 1/20 0.35
CYTH2 Q99418 1/20 0.35
KDM4E B2RXH2 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9010921 0.80 ALDH1A1 (0.39) MAPTALDH1A1GAAKAT6AHPGD
SCHEMBL6932650 0.77 LMNA (0.48) MAPTALDH1A1GAAHTTSMN1; SMN2
SCHEMBL777052 0.75 HPGD (0.46) MAPTALDH1A1GAAKAT6AHPGD
SCHEMBL6933539 0.73 KAT6A (0.49) MAPTALDH1A1KAT6AHPGDHTT
SCHEMBL23277176 0.71 SMN1; SMN2 (0.47) MAPTALDH1A1TP53HTTHSD17B10
SCHEMBL65095 0.70 SMN1; SMN2 (0.46) MAPTALDH1A1TP53HTTHSD17B10
SCHEMBL6931446 0.70 HSD11B1 (0.47) MAPTALDH1A1HPGDFLT1FLT4
SCHEMBL6931744 0.70 HSD11B1 (0.47) ALDH1A1KMT2AKDM4EL3MBTL1
SCHEMBL6931275 0.70 HSD11B1 (0.51) MAPTALDH1A1GAAHPGDHTT
SCHEMBL991197 0.69 ERCC5 (0.50) ALDH1A1GAAHPGDERCC5FEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6589705-B1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2003-07-08 US disclosed
US-6555289-B2 Positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an akali developer increases under action of an acid FUJI PHOTO FILM CO., LTD. (JP) 2003-04-29 US disclosed
US-6528229-B2 Mixture of polymer and acid generators FUJI PHOTO FILM CO., LTD. (JP) 2003-03-04 US disclosed
US-6506535-B1 A positive working photoresist composition for use in the production of semiconductor integrated circuit devices, mask for the production of integrated circuits, printed wiring boards, liquid crystal panels FUJI PHOTO FILM CO., LTD. (JP) 2003-01-14 US disclosed
US-20020048720-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-04-25 US disclosed
US-20010041303-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
EP-1096319-A1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-05-02 EP disclosed