SCHEMBL6931446

SCHEMBL6931446

[N-]=[N+]=C(c1ccc(Cl)cc1)S(=O)(=O)c1ccccc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 2/20 0.47
KMT2A Q03164 5/20 0.47
MEN1 O00255 4/20 0.47
ALDH1A1 P00352 1/20 0.47
LMNA P02545 1/20 0.43
CES2 O00748 1/20 0.43
CES1 P23141 1/20 0.43
MAPT P10636 2/20 0.42
HTT P42858 1/20 0.42
TDP1 Q9NUW8 2/20 0.41
FLT1 P17948 1/20 0.41
FLT4 P35916 1/20 0.41
KDR P35968 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.41
CA1 P00915 1/20 0.40
CA2 P00918 1/20 0.40
CA4 P22748 1/20 0.40
CA9 Q16790 1/20 0.40
KDM4E B2RXH2 1/20 0.39
CYP1A2 P05177 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7187006 0.84 KMT2A (0.51) KMT2AMEN1ALDH1A1LMNACES2
SCHEMBL6931744 0.83 HSD11B1 (0.47) HSD11B1KMT2AALDH1A1L3MBTL1KDM4E
SCHEMBL6932650 0.83 LMNA (0.48) HSD11B1KMT2AMEN1ALDH1A1LMNA
SCHEMBL6931275 0.80 HSD11B1 (0.51) HSD11B1KMT2AMEN1ALDH1A1CES2
SCHEMBL8637821 0.80 KMT2A (0.53) HSD11B1KMT2AMEN1ALDH1A1LMNA
SCHEMBL11973784 0.79 MAPT (0.44) HSD11B1KMT2AMEN1ALDH1A1LMNA
SCHEMBL7187013 0.78 IDH1 (0.37) HSD11B1KMT2AMEN1ALDH1A1CES2
SCHEMBL6933539 0.73 KAT6A (0.49) KMT2AMEN1ALDH1A1LMNAMAPT
SCHEMBL547494 0.71 ALDH1A1 (0.48) KMT2AMEN1ALDH1A1LMNACES1
SCHEMBL65095 0.70 SMN1; SMN2 (0.46) KMT2AALDH1A1LMNAMAPTHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6589705-B1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2003-07-08 US disclosed
US-6555289-B2 Positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an akali developer increases under action of an acid FUJI PHOTO FILM CO., LTD. (JP) 2003-04-29 US disclosed
US-6528229-B2 Mixture of polymer and acid generators FUJI PHOTO FILM CO., LTD. (JP) 2003-03-04 US disclosed
US-6506535-B1 A positive working photoresist composition for use in the production of semiconductor integrated circuit devices, mask for the production of integrated circuits, printed wiring boards, liquid crystal panels FUJI PHOTO FILM CO., LTD. (JP) 2003-01-14 US disclosed
US-20020048720-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-04-25 US disclosed
US-20010041303-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
EP-1096319-A1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-05-02 EP disclosed