SCHEMBL6933539

SCHEMBL6933539

Cc1cccc(C(=[N+]=[N-])S(=O)(=O)c2ccccc2)c1

nearest known ligand 0.49

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
KAT6A Q92794 2/20 0.49
SMN1; SMN2 Q16637 2/20 0.44
POLB P06746 3/20 0.42
PARP1 P09874 1/20 0.41
ALDH1A1 P00352 3/20 0.41
HTT P42858 1/20 0.40
MEN1 O00255 3/20 0.40
KMT2A Q03164 3/20 0.40
KCNK3 O14649 1/20 0.40
KCNK9 Q9NPC2 1/20 0.40
MAPT P10636 1/20 0.39
CTDSP1 Q9GZU7 1/20 0.39
HDAC8 Q9BY41 1/20 0.39
HDAC6 Q9UBN7 1/20 0.39
LMNA P02545 1/20 0.39
HPGD P15428 1/20 0.38
ALOX12 P18054 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6932650 0.83 LMNA (0.48) SMN1; SMN2ALDH1A1HTTMEN1KMT2A
SCHEMBL6932659 0.81 HSD11B1 (0.54) KAT6ASMN1; SMN2PARP1MEN1KMT2A
SCHEMBL9010834 0.81 KAT6A (0.49) KAT6ASMN1; SMN2POLBPARP1ALDH1A1
SCHEMBL777972 0.78 KAT6A (0.57) KAT6ASMN1; SMN2POLBPARP1ALDH1A1
SCHEMBL6931446 0.73 HSD11B1 (0.47) ALDH1A1HTTMEN1KMT2AMAPT
SCHEMBL6926552 0.73 MAPT (0.38) KAT6ASMN1; SMN2ALDH1A1HTTKMT2A
SCHEMBL6931744 0.73 HSD11B1 (0.47) ALDH1A1KMT2A
SCHEMBL6931275 0.73 HSD11B1 (0.51) SMN1; SMN2ALDH1A1HTTMEN1KMT2A
SCHEMBL9010783 0.72 ALDH1A1 (0.47) KAT6ASMN1; SMN2POLBPARP1ALDH1A1
SCHEMBL2529402 0.72 KMT2A (0.46) SMN1; SMN2ALDH1A1MEN1KMT2AMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6589705-B1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2003-07-08 US disclosed
US-6555289-B2 Positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an akali developer increases under action of an acid FUJI PHOTO FILM CO., LTD. (JP) 2003-04-29 US disclosed
US-6528229-B2 Mixture of polymer and acid generators FUJI PHOTO FILM CO., LTD. (JP) 2003-03-04 US disclosed
US-6506535-B1 A positive working photoresist composition for use in the production of semiconductor integrated circuit devices, mask for the production of integrated circuits, printed wiring boards, liquid crystal panels FUJI PHOTO FILM CO., LTD. (JP) 2003-01-14 US disclosed
US-20020048720-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-04-25 US disclosed
US-20010041303-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
EP-1096319-A1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-05-02 EP disclosed