SCHEMBL6932650

SCHEMBL6932650

Cc1ccc(C(=[N+]=[N-])S(=O)(=O)c2ccccc2)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 3/20 0.48
HTT P42858 1/20 0.48
L3MBTL1 Q9Y468 1/20 0.48
HSD11B1 P28845 1/20 0.47
MAPT P10636 1/20 0.45
CES2 O00748 1/20 0.43
CES1 P23141 1/20 0.43
USP2 O75604 1/20 0.41
RECQL P46063 1/20 0.41
ALDH1A1 P00352 6/20 0.40
SMN1; SMN2 Q16637 2/20 0.40
NOD2 Q9HC29 1/20 0.40
CA12 O43570 1/20 0.40
CA9 Q16790 1/20 0.40
PTGS2 P35354 1/20 0.40
NPC1 O15118 2/20 0.40
KMT2A Q03164 2/20 0.40
GAA P10253 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
MEN1 O00255 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6932111 0.84 KMT2A (0.48) LMNAHTTL3MBTL1MAPTALDH1A1
SCHEMBL7187006 0.84 KMT2A (0.51) LMNAHTTL3MBTL1MAPTCES2
SCHEMBL6931446 0.83 HSD11B1 (0.47) LMNAHTTL3MBTL1HSD11B1MAPT
SCHEMBL6931744 0.83 HSD11B1 (0.47) L3MBTL1HSD11B1ALDH1A1PTGS2KMT2A
SCHEMBL6931275 0.83 HSD11B1 (0.51) HTTL3MBTL1HSD11B1MAPTCES2
SCHEMBL6933539 0.83 KAT6A (0.49) LMNAHTTMAPTALDH1A1SMN1; SMN2
SCHEMBL384366 0.80 CES2 (0.51) LMNAHTTL3MBTL1HSD11B1MAPT
SCHEMBL21838871 0.79 MAPT (0.47) LMNAHTTL3MBTL1HSD11B1MAPT
SCHEMBL14600187 0.79 MAPT (0.47) LMNAHTTL3MBTL1HSD11B1MAPT
SCHEMBL6926552 0.77 MAPT (0.38) HTTL3MBTL1MAPTALDH1A1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6589705-B1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2003-07-08 US disclosed
US-6555289-B2 Positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an akali developer increases under action of an acid FUJI PHOTO FILM CO., LTD. (JP) 2003-04-29 US disclosed
US-6528229-B2 Mixture of polymer and acid generators FUJI PHOTO FILM CO., LTD. (JP) 2003-03-04 US disclosed
US-6506535-B1 A positive working photoresist composition for use in the production of semiconductor integrated circuit devices, mask for the production of integrated circuits, printed wiring boards, liquid crystal panels FUJI PHOTO FILM CO., LTD. (JP) 2003-01-14 US disclosed
US-20020048720-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-04-25 US disclosed
US-20010041303-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
EP-1096319-A1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-05-02 EP disclosed