SCHEMBL7187006

SCHEMBL7187006

Cc1ccc(S(=O)(=O)C(=[N+]=[N-])c2ccc(Cl)cc2)cc1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 3/20 0.51
MAPT P10636 3/20 0.51
HTT P42858 2/20 0.51
CES2 O00748 1/20 0.47
CES1 P23141 1/20 0.47
TP53 P04637 2/20 0.47
LMNA P02545 2/20 0.42
ALDH1A1 P00352 2/20 0.42
KDM4E B2RXH2 1/20 0.42
POLB P06746 1/20 0.42
NOD2 Q9HC29 1/20 0.42
MAOA P21397 1/20 0.42
MAOB P27338 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.41
ENPP3 O14638 1/20 0.41
ENPP1 P22413 1/20 0.41
ENPP2 Q13822 1/20 0.41
CYP3A4 P08684 1/20 0.41
BCHE P06276 1/20 0.41
ACHE P22303 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6932111 0.84 KMT2A (0.48) KMT2AMAPTHTTTP53LMNA
SCHEMBL6931446 0.84 HSD11B1 (0.47) KMT2AMAPTHTTCES2CES1
SCHEMBL6932650 0.84 LMNA (0.48) KMT2AMAPTHTTCES2CES1
SCHEMBL14650732 0.82 MAPT (0.48) KMT2AMAPTHTTCES2CES1
SCHEMBL6932211 0.81 CES2 (0.56) KMT2AMAPTHTTCES2CES1
SCHEMBL7187013 0.76 IDH1 (0.37) KMT2AHTTCES2CES1ALDH1A1
SCHEMBL4545348 0.76 MAPT (0.43) KMT2AMAPTHTTCES2CES1
SCHEMBL547494 0.72 ALDH1A1 (0.48) KMT2AMAPTHTTCES1LMNA
SCHEMBL36092 0.72 GAA (0.48) KMT2AMAPTHTTLMNAALDH1A1
SCHEMBL9010795 0.71 CES2 (0.48) KMT2AMAPTHTTCES2CES1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6589705-B1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2003-07-08 US disclosed
US-6555289-B2 Positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an akali developer increases under action of an acid FUJI PHOTO FILM CO., LTD. (JP) 2003-04-29 US disclosed
US-6506535-B1 A positive working photoresist composition for use in the production of semiconductor integrated circuit devices, mask for the production of integrated circuits, printed wiring boards, liquid crystal panels FUJI PHOTO FILM CO., LTD. (JP) 2003-01-14 US disclosed
US-20020048720-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-04-25 US disclosed
EP-1096319-A1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-05-02 EP disclosed