SCHEMBL6932111

SCHEMBL6932111

Cc1ccc(S(=O)(=O)C(=[N+]=[N-])c2ccc(F)cc2)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 5/20 0.48
MEN1 O00255 2/20 0.48
PAX8 Q06710 1/20 0.48
GAA P10253 1/20 0.48
L3MBTL1 Q9Y468 1/20 0.48
ALDH1A1 P00352 4/20 0.43
TAS2R14 Q9NYV8 1/20 0.43
TP53 P04637 2/20 0.41
ACHE P22303 2/20 0.41
BCHE P06276 1/20 0.41
EGFR P00533 1/20 0.40
ERBB2 P04626 1/20 0.40
LMNA P02545 2/20 0.40
HTT P42858 2/20 0.40
MAPT P10636 2/20 0.40
TDP1 Q9NUW8 1/20 0.40
POLB P06746 1/20 0.39
NOD2 Q9HC29 1/20 0.39
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7187006 0.84 KMT2A (0.51) KMT2AMEN1L3MBTL1ALDH1A1TP53
SCHEMBL6931744 0.84 HSD11B1 (0.47) KMT2AL3MBTL1ALDH1A1TAS2R14EGFR
SCHEMBL6932650 0.84 LMNA (0.48) KMT2AMEN1GAAL3MBTL1ALDH1A1
SCHEMBL27962645 0.77 KMT2A (0.60) KMT2AMEN1PAX8GAAL3MBTL1
SCHEMBL6932115 0.76 TSHR (0.36) KMT2AMEN1GAALMNAPOLB
SCHEMBL20002200 0.76 KMT2A (0.51) KMT2AMEN1PAX8GAAL3MBTL1
SCHEMBL36092 0.72 GAA (0.48) KMT2AMEN1GAAALDH1A1LMNA
SCHEMBL2532563 0.72 CA1 (0.45) KMT2AMEN1ALDH1A1EGFRERBB2
SCHEMBL9010795 0.71 CES2 (0.48) KMT2APAX8GAAALDH1A1LMNA
SCHEMBL4792586 0.69 GAA (0.76) KMT2AMEN1PAX8GAAL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6589705-B1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2003-07-08 US disclosed
US-6555289-B2 Positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an akali developer increases under action of an acid FUJI PHOTO FILM CO., LTD. (JP) 2003-04-29 US disclosed
US-6528229-B2 Mixture of polymer and acid generators FUJI PHOTO FILM CO., LTD. (JP) 2003-03-04 US disclosed
US-6506535-B1 A positive working photoresist composition for use in the production of semiconductor integrated circuit devices, mask for the production of integrated circuits, printed wiring boards, liquid crystal panels FUJI PHOTO FILM CO., LTD. (JP) 2003-01-14 US disclosed
US-20020048720-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-04-25 US disclosed
US-20010041303-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
EP-1096319-A1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-05-02 EP disclosed