SCHEMBL704187

SCHEMBL704187

CC(C)(CO[SiH3])C(c1ccccc1)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RIPK1 Q13546 2/20 0.37
HRH1 P35367 2/20 0.35
SLC6A3 Q01959 2/20 0.35
CACNA1F O60840 1/20 0.35
CHRM2 P08172 1/20 0.35
CHRM1 P11229 1/20 0.35
ADRA2B P18089 1/20 0.35
CHRM3 P20309 1/20 0.35
ADRA1A P35348 1/20 0.35
OPRK1 P41145 1/20 0.35
CACNA1D Q01668 1/20 0.35
KCNH2 Q12809 1/20 0.35
CACNA1S Q13698 1/20 0.35
CACNA1C Q13936 1/20 0.35
SCN5A Q14524 1/20 0.35
SCN4A P35499 5/20 0.33
TAAR1 Q96RJ0 2/20 0.33
SIGMAR1 Q99720 1/20 0.33
HTR2A P28223 1/20 0.33
LMNA P02545 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707571 0.77 RIPK1 (0.35) RIPK1HRH1SLC6A3CACNA1FCHRM2
SCHEMBL9493203 0.74 LMNA (0.43) RIPK1HRH1SLC6A3CACNA1FCHRM2
SCHEMBL704479 0.73 L3MBTL1 (0.38) RIPK1ATML3MBTL1
SCHEMBL4329684 0.72 RIPK1 (0.41) RIPK1HRH1SLC6A3CACNA1FCHRM2
SCHEMBL8608404 0.72 RIPK1 (0.41) RIPK1HRH1SLC6A3CACNA1FCHRM2
SCHEMBL53374 0.72 TAAR1 (0.37) RIPK1HRH1SLC6A3CACNA1FCHRM2
SCHEMBL8634300 0.72 RIPK1 (0.44) RIPK1HRH1SLC6A3CACNA1FCHRM2
SCHEMBL1823949 0.71 TRPA1 (0.55) RIPK1HRH1SLC6A3CACNA1FCHRM2
SCHEMBL8860874 0.71 RIPK1 (0.44) RIPK1HRH1SLC6A3CACNA1FCHRM2
SCHEMBL104983 0.69 SLC6A2 (0.48) RIPK1TAAR1LMNASLC6A2CYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-5192732-A PROPYLENE POLYMERIZATION COCATALYST CONTAINING SILANE AND RESULTANT CATALYSTS ATOCHEM (FR) 1993-03-09 US disclosed