SCHEMBL704479

SCHEMBL704479

CC(C)(CC(=O)O[SiH3])C(c1ccccc1)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 2/20 0.38
ATM Q13315 2/20 0.38
RIPK1 Q13546 2/20 0.38
KMT2A Q03164 4/20 0.37
MEN1 O00255 3/20 0.37
CYP2C19 P33261 1/20 0.37
HIF1A Q16665 1/20 0.37
POLB P06746 1/20 0.37
NR3C1 P04150 1/20 0.37
MAPT P10636 1/20 0.36
TSHR P16473 1/20 0.35
CNR1 P21554 1/20 0.35
CNR2 P34972 1/20 0.35
KDM4E B2RXH2 1/20 0.35
PPARA Q07869 1/20 0.35
HSD11B1 P28845 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8298741 0.74 PPARA (0.41) L3MBTL1ATMRIPK1NR3C1MAPT
SCHEMBL704187 0.73 RIPK1 (0.37) L3MBTL1ATMRIPK1
SCHEMBL706628 0.71 ALDH1A1 (0.49) KMT2AMEN1CYP2C19POLBMAPT
SCHEMBL707571 0.70 RIPK1 (0.35) L3MBTL1ATMRIPK1NR3C1
SCHEMBL7056829 0.70 LTB4R (0.48) CYP2C19POLB
SCHEMBL8634300 0.70 RIPK1 (0.44) RIPK1NR3C1KDM4E
SCHEMBL28035718 0.70 PIK3CD (0.32)
SCHEMBL14419939 0.70 KMT2A (0.44) L3MBTL1RIPK1KMT2AMEN1POLB
SCHEMBL705573 0.68 MTNR1A (0.44) CNR1CNR2
SCHEMBL7759603 0.68 ALDH1A1 (0.46) L3MBTL1ATMKMT2AMEN1POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed