SCHEMBL707571

SCHEMBL707571

CC(C)(CC(C)(C)C(c1ccccc1)c1ccccc1)O[SiH3]

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RIPK1 Q13546 2/20 0.35
SLC6A3 Q01959 2/20 0.33
HRH1 P35367 2/20 0.33
CACNA1F O60840 1/20 0.33
CHRM2 P08172 1/20 0.33
CHRM1 P11229 1/20 0.33
ADRA2B P18089 1/20 0.33
CHRM3 P20309 1/20 0.33
ADRA1A P35348 1/20 0.33
OPRK1 P41145 1/20 0.33
CACNA1D Q01668 1/20 0.33
KCNH2 Q12809 1/20 0.33
CACNA1S Q13698 1/20 0.33
CACNA1C Q13936 1/20 0.33
SCN5A Q14524 1/20 0.33
SLC6A2 P23975 1/20 0.32
SLC6A4 P31645 1/20 0.32
SCN4A P35499 5/20 0.32
TAAR1 Q96RJ0 2/20 0.31
HTR2A P28223 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704187 0.77 RIPK1 (0.37) RIPK1SLC6A3HRH1CACNA1FCHRM2
SCHEMBL707821 0.75 HRH1 (0.40) RIPK1SLC6A3HRH1CACNA1FCHRM2
SCHEMBL53374 0.74 TAAR1 (0.37) RIPK1SLC6A3HRH1CACNA1FCHRM2
SCHEMBL7759599 0.72 RIPK1 (0.48) RIPK1SLC6A3HRH1CACNA1FCHRM2
SCHEMBL9493203 0.71 LMNA (0.43) RIPK1SLC6A3HRH1CACNA1FCHRM2
SCHEMBL8298741 0.70 PPARA (0.41) RIPK1LMNAATML3MBTL1NR3C1
SCHEMBL704479 0.70 L3MBTL1 (0.38) RIPK1ATML3MBTL1NR3C1
SCHEMBL8634300 0.70 RIPK1 (0.44) RIPK1SLC6A3HRH1CACNA1FCHRM2
SCHEMBL4329684 0.70 RIPK1 (0.41) RIPK1SLC6A3HRH1CACNA1FCHRM2
SCHEMBL8608404 0.70 RIPK1 (0.41) RIPK1SLC6A3HRH1CACNA1FCHRM2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed